SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR FCX619 ISSUE 5 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE; RCE(sat) 87mat 2.75A COMPLIMENTARY TYPE PARTMARKING DETAIL - C E C B FCX720 619 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 50 V Collector-Emitter Voltage V CEO 50 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 6 A Continuous Collector Current IC 2.75 A Base Current IB 500 mA Power Dissipation at T amb=25°C P tot 1† 2‡ W Operating and Storage Temperature Range T j:T stg -55 to +150 °C † ‡ recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX619 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 50 Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO Collector Cut-Off Current I CBO MAX. UNIT CONDITIONS. 190 V I C=100 A 50 65 V I C=10mA* 5 8.3 V I E=100 A 100 nA V CB=40V Emitter Cut-Off Current I EBO 100 nA V EB=4V Collector Emitter Cut-Off Current I CES 100 nA V CES =40V Collector-Emitter Saturation Voltage V CE(SAT) 13 150 190 240 25 220 260 320 mV mV mV mV I C=0.1A, I B=10mA* I C=1A, I B=10mA* I C=2A, I B=50mA* I C=2.75A,I B=100mA* Base-Emitter Saturation Voltage V BE(SAT) 0.97 1.1 V I C=2.75A, I B=100mA* Base-Emitter Turn-On Voltage V BE(ON) 0.89 1.0 V I C =2.75A, V CE=2V* Static Forward Current Transfer Ratio h FE 200 300 200 100 400 450 400 200 30 Transition Frequency fT 100 165 Output Capacitance C OBO 12 Turn-On Time t (ON) Turn-Off Time t (OFF) I C=10mA, V CE=2V* I C=200mA, V CE=2V* I C=1A, V CE=2V* I C=2A, V CE=2V* I C=6A, V CE=2V* MHz I C=50mA, V CE=10V f=100MHz pF V CB=10V, f=1MHz 170 ns 750 ns V CC=10V, I C=1A I B1=-I B2=10mA 20 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device FCX619