NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B TYPICAL CHARACTERISTICS 0.8 - (Volts) - (Volts) IC/IB=10 0.6 0.4 0.6 V V 0 0.01 0.1 1 10 VCE(sat) v IC VCE=2V 1.2 1.0 1K 0.8 0.6 IC/IB=100 1.2 1.0 h V 0.6 h 0.4 0.2 0 0 0.01 0.1 10 1 0 1.6 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 10 10 VCE=2V 1.4 1 1.2 1.0 0.8 0.1 0.6 DC 1s 100ms 10ms 1ms 100µs 0.4 0.2 0 0 0.01 0.1 0.01 0.1 1 1 10 10 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 222 E C B PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 45 Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 1.4 0.8 500 0.4 -55°C +25°C +100°C +175°C 1.6 1.5K 0.2 - (Volts) 1 VCE(sat) v IC - (Volts) 1.4 0.1 IC - Collector Current (Amps) - Typical Gain 1.6 0.01 10 IC - Collector Current (Amps) +100°C +25°C -55°C C ABSOLUTE MAXIMUM RATINGS 0.2 0 V IC/IB=100 0.4 0.2 - Normalised Gain -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=200 IC/IB=100 0.8 FZT690B ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers, DC-DC converters PARTMARKING DETAIL FZT690B 100 PARAMETER SYMBOL MIN. TYP. MAX UNIT CONDITIONS. . Collector-Base Breakdown Voltage V(BR)CBO 45 V IC=100µ A Collector-EmitterBreakdown V(BR)CEO 45 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=35V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.5 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* 0.9 V IC=1A, VCE=2V* Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 500 400 150 50 150 IC=100mA,VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=3A, VCE=2V* MHz IC=50mA,VCE=5V,f=50MHz Transition Frequency fT Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 16 pF VCB=10V, f=1MHz Switching Times ton toff 33 1300 ns ns IC=500mA, IB!=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 221 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B TYPICAL CHARACTERISTICS 0.8 - (Volts) - (Volts) IC/IB=10 0.6 0.4 0.6 V V 0 0.01 0.1 1 10 VCE(sat) v IC VCE=2V 1.2 1.0 1K 0.8 0.6 IC/IB=100 1.2 1.0 h V 0.6 h 0.4 0.2 0 0 0.01 0.1 10 1 0 1.6 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 10 10 VCE=2V 1.4 1 1.2 1.0 0.8 0.1 0.6 DC 1s 100ms 10ms 1ms 100µs 0.4 0.2 0 0 0.01 0.1 0.01 0.1 1 1 10 10 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 222 E C B PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 45 Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 1.4 0.8 500 0.4 -55°C +25°C +100°C +175°C 1.6 1.5K 0.2 - (Volts) 1 VCE(sat) v IC - (Volts) 1.4 0.1 IC - Collector Current (Amps) - Typical Gain 1.6 0.01 10 IC - Collector Current (Amps) +100°C +25°C -55°C C ABSOLUTE MAXIMUM RATINGS 0.2 0 V IC/IB=100 0.4 0.2 - Normalised Gain -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=200 IC/IB=100 0.8 FZT690B ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers, DC-DC converters PARTMARKING DETAIL FZT690B 100 PARAMETER SYMBOL MIN. TYP. MAX UNIT CONDITIONS. . Collector-Base Breakdown Voltage V(BR)CBO 45 V IC=100µ A Collector-EmitterBreakdown V(BR)CEO 45 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=35V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.5 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* 0.9 V IC=1A, VCE=2V* Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 500 400 150 50 150 IC=100mA,VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=3A, VCE=2V* MHz IC=50mA,VCE=5V,f=50MHz Transition Frequency fT Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 16 pF VCB=10V, f=1MHz Switching Times ton toff 33 1300 ns ns IC=500mA, IB!=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 221