SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 TYPICAL CHARACTERISTICS - (Volts) V 0.1 1 0.01 1 10 VCE(sat) v IC VCE=2V - (Volts) 1K 500 V 0.01 0.1 1.4 IC/IB=100 1.2 1.0 0.8 0.6 0.4 0 0.01 0.1 1 hFE v IC VBE(sat) v IC 10 10 1 1.0 0.8 0.1 0.6 0.01 0.1 1 IC - Collector Current (Amps) 10 0.01 0.1 DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 224 SYMBOL VALUE UNIT Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage VCEO 70 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 5 A Continuous Collector Current IC 2 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS. BreakdownVoltages V(BR)CBO 70 V IC=100µ A V(BR)CEO 70 V IC=10mA* V(BR)EBO 5 IC - Collector Current (Amps) VCE=2V C B PARAMETER V IE=100µ A ICBO 0.1 µA VCB=55V IEBO 0.1 µA VEB=4V VCE(sat) 0.15 0.5 0.5 V V V IC=0.1A, IB=0.5mA* IC=1A, IB=10mA* IC=2A, IB=200mA* VBE(sat) 0.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 150 Cut-Off Currents IC - Collector Current (Amps) -55°C +25°C +100°C +175°C E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.2 10 1 -55°C +25°C +100°C +175°C 1.6 1.5K 0.4 0.2 0.4 0.2 0 0 0.1 VCE(sat) v IC 0.6 1.4 1.2 0.2 IC - Collector Current (Amps) +100°C +25°C -55°C C ABSOLUTE MAXIMUM RATINGS IC - Collector Current (Amps) 0.8 1.6 IC/IB=100 0.6 0 10 - Typical Gain - Normalised Gain h 0.01 1.0 0 0 FEATURES * High Gain + Very low saturation voltage APPLICATIONS * Darlington replacement * Relay drivers, DC-DC converters PARTMARKING DETAIL FZT692B 0.4 0.2 1.4 1.2 -55°C +25°C +100°C +175°C 0.8 0.4 1.6 - (Volts) Tamb=25°C 0.6 0 V IC/IB=200 IC/IB=100 IC/IB=10 h V - (Volts) 0.8 FZT692B 100 Saturation Voltages IC=100mA,VCE=2V* IC=500mA, VCE =2V* IC=1A,VCE=2V* MHz IC=50mA, VCE=5V, f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 12 pF VCB=10V, f=1MHz Switching Times ton toff 46 1440 ns ns IC=500mA, IB1=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 223 SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 TYPICAL CHARACTERISTICS - (Volts) V 0.1 1 0.01 1 10 VCE(sat) v IC VCE=2V - (Volts) 1K 500 V 0.01 0.1 1.4 IC/IB=100 1.2 1.0 0.8 0.6 0.4 0 0.01 0.1 1 hFE v IC VBE(sat) v IC 10 10 1 1.0 0.8 0.1 0.6 0.01 0.1 1 IC - Collector Current (Amps) 10 0.01 0.1 DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 224 SYMBOL VALUE UNIT Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage VCEO 70 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 5 A Continuous Collector Current IC 2 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS. BreakdownVoltages V(BR)CBO 70 V IC=100µ A V(BR)CEO 70 V IC=10mA* V(BR)EBO 5 IC - Collector Current (Amps) VCE=2V C B PARAMETER V IE=100µ A ICBO 0.1 µA VCB=55V IEBO 0.1 µA VEB=4V VCE(sat) 0.15 0.5 0.5 V V V IC=0.1A, IB=0.5mA* IC=1A, IB=10mA* IC=2A, IB=200mA* VBE(sat) 0.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 150 Cut-Off Currents IC - Collector Current (Amps) -55°C +25°C +100°C +175°C E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.2 10 1 -55°C +25°C +100°C +175°C 1.6 1.5K 0.4 0.2 0.4 0.2 0 0 0.1 VCE(sat) v IC 0.6 1.4 1.2 0.2 IC - Collector Current (Amps) +100°C +25°C -55°C C ABSOLUTE MAXIMUM RATINGS IC - Collector Current (Amps) 0.8 1.6 IC/IB=100 0.6 0 10 - Typical Gain - Normalised Gain h 0.01 1.0 0 0 FEATURES * High Gain + Very low saturation voltage APPLICATIONS * Darlington replacement * Relay drivers, DC-DC converters PARTMARKING DETAIL FZT692B 0.4 0.2 1.4 1.2 -55°C +25°C +100°C +175°C 0.8 0.4 1.6 - (Volts) Tamb=25°C 0.6 0 V IC/IB=200 IC/IB=100 IC/IB=10 h V - (Volts) 0.8 FZT692B 100 Saturation Voltages IC=100mA,VCE=2V* IC=500mA, VCE =2V* IC=1A,VCE=2V* MHz IC=50mA, VCE=5V, f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 12 pF VCB=10V, f=1MHz Switching Times ton toff 46 1440 ns ns IC=500mA, IB1=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 223