SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT795A TYPICAL CHARACTERISTICS 1.8 1.6 IC /IB=40 1.8 Tamb=25°C IC /IB=20 0.4 1.4 - (Volts) - (Volts) V 1.4 1.2 1.0 0.8 1.2 0.8 V 0.4 0 0 0.001 1.6 0.01 0.1 1 0.001 10 1 10 VCE(sat) v IC VCE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.6 750 1.0 500 0.8 0.6 - (Volts) - Typical Gain 1.4 1.2 h 0.2 0.1 10 1 0.01 0.1 1 1 - (Volts) V 0.1 1.0 DC 1s 100ms 10ms 1ms 100µs 0.8 0.01 0.4 0.2 0.1 1 0.001 10 -140 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 10 100 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area A mA 2 W -55 to +150 °C 1000 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO -140 V IC=-100µ A V(BR)CEO -140 V IC=-10mA* V(BR)EBO -5 V IE=-100µ A ICBO -0.1 µA VCB=-100V IEBO -0.1 µA VEB=-4V VCE(sat) -0.3 -0.3 -0.25 V V V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-500mA, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 100 Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff -0.75 800 IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz 15 pF VCB=-10V, f=1MHz 100 1900 ns ns IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 254 -1 -500 Collector-Emitter Saturation Voltage 10 1.4 0.01 VCEO Cut-Off Currents VBE(sat) v IC 0 V Collector-Emitter Voltage 0.4 hFE v IC 0.6 UNIT -140 0.6 IC - Collector Current (Amps) 1.2 VALUE VCBO Breakdown Voltages 1.0 0 VCE=2V SYMBOL Collector-Base Voltage PARAMETER 1.2 IC - Collector Current (Amps) -55°C +25°C +100°C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) IC /IB=10 0.2 0.01 E C PARAMETER 0.8 V 250 0.4 1.6 0.1 IC - Collector Current (Amps) 1.4 0 0.01 IC - Collector Current (Amps) +100°C +25°C -55°C C ABSOLUTE MAXIMUM RATINGS. 1.0 0.2 0.2 - Normalised Gain IC /IB =40 0.6 0.6 h -55°C +25°C +100°C +175°C 1.6 IC /IB =10 FZT795A ISSUE 3 - OCTOBER 1995 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps and very low VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT694B PARTMARKING DETAIL FZT795A 3 - 253 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT795A TYPICAL CHARACTERISTICS 1.8 1.6 IC /IB=40 1.8 Tamb=25°C IC /IB=20 0.4 1.4 - (Volts) - (Volts) V 1.4 1.2 1.0 0.8 1.2 0.8 V 0.4 0 0 0.001 1.6 0.01 0.1 1 0.001 10 1 10 VCE(sat) v IC VCE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.6 750 1.0 500 0.8 0.6 - (Volts) - Typical Gain 1.4 1.2 h 0.2 0.1 10 1 0.01 0.1 1 1 - (Volts) V 0.1 1.0 DC 1s 100ms 10ms 1ms 100µs 0.8 0.01 0.4 0.2 0.1 1 0.001 10 -140 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 10 100 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area A mA 2 W -55 to +150 °C 1000 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO -140 V IC=-100µ A V(BR)CEO -140 V IC=-10mA* V(BR)EBO -5 V IE=-100µ A ICBO -0.1 µA VCB=-100V IEBO -0.1 µA VEB=-4V VCE(sat) -0.3 -0.3 -0.25 V V V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-500mA, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 100 Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff -0.75 800 IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz 15 pF VCB=-10V, f=1MHz 100 1900 ns ns IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 254 -1 -500 Collector-Emitter Saturation Voltage 10 1.4 0.01 VCEO Cut-Off Currents VBE(sat) v IC 0 V Collector-Emitter Voltage 0.4 hFE v IC 0.6 UNIT -140 0.6 IC - Collector Current (Amps) 1.2 VALUE VCBO Breakdown Voltages 1.0 0 VCE=2V SYMBOL Collector-Base Voltage PARAMETER 1.2 IC - Collector Current (Amps) -55°C +25°C +100°C B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) IC /IB=10 0.2 0.01 E C PARAMETER 0.8 V 250 0.4 1.6 0.1 IC - Collector Current (Amps) 1.4 0 0.01 IC - Collector Current (Amps) +100°C +25°C -55°C C ABSOLUTE MAXIMUM RATINGS. 1.0 0.2 0.2 - Normalised Gain IC /IB =40 0.6 0.6 h -55°C +25°C +100°C +175°C 1.6 IC /IB =10 FZT795A ISSUE 3 - OCTOBER 1995 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps and very low VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT694B PARTMARKING DETAIL FZT795A 3 - 253