FZT789A 1.8 Tamb=25°C 1.0 1.4 1.2 0.6 0.6 V 0.8 0.4 0.01 0.1 1 h 0 0 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.0 500 0.8 0.6 250 h 0.4 0.2 -55°C +25°C +100°C +175°C 1.6 750 1.4 - (Volts) - Normalised Gain 1.2 0.01 IC - Collector Current (Amps) VCE=2V IC/IB=100 1.6 - (Volts) 1.2 V 1.4 0.6 0.1 -25 VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg -40 V -25 -35 V IC=-10mA* V(BR)EBO -5 -8.5 V IE=-100µ A -0.1 10 µA µA VCB=-15V VCB=-15V, Tamb=100°C -0.1 µA VEB=-4V 0.4 0.01 0.1 1 10 1 0.1 0.4 0.2 0.01 0.1 DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area VBE(on) v IC 3 - 247 W °C -25 100 IC=-100µ A Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO Saturation Voltages VCE(sat) -0.15 -0.25 V -0.30 -0.45 V -0.30 -0.50 V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* VBE(sat) -0.8 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 200 100 Transition Frequency fT 100 Input Capacitance Cibo 225 pF Output Capacitance Cobo 25 pF VCB=-10V, f=1MHz Switching Times ton toff 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V 10 10 2 -55 to +150 V(BR)CEO 0.8 VBE(sat) v IC 1 VCBO SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. hFE v IC 0.1 V Collector-Base Voltage Collector-Emitter Voltage V(BR)CBO IC - Collector Current (Amps) 0.01 UNIT Breakdown Voltages 0.8 0 VALUE PARAMETER 1.0 0 SYMBOL 1.0 0 VCE=2V B 1.2 IC - Collector Current (Amps) -55°C +25°C +100°C FZT689B FZT789A PARAMETER 0.6 10 1 E C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.2 0.01 C ABSOLUTE MAXIMUM RATINGS. 0.2 0 10 - Typical Gain 1.4 COMPLEMENTARY TYPE PARTMARKING DETAIL - 0.4 +100°C +25°C -55°C 1.6 IC/IB=100 1.0 0.8 0.2 0 -55°C +25°C +100°C +175°C 1.6 - (Volts) 1.4 1.2 IC/IB=100 IC/IB=40 IC/IB=10 V V - (Volts) 1.6 FZT789A ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 200 at IC=2 Amps and very low saturation voltage APPLICATIONS * Battery powered circuits, fast charge converters TYPICAL CHARACTERISTICS 1.8 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR -1.0 800 IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* MHz IC=-50mA, VCE=-5V, f=50MHz VEB=-0.5V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 246 FZT789A 1.8 Tamb=25°C 1.0 1.4 1.2 0.6 0.6 V 0.8 0.4 0.01 0.1 1 h 0 0 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.0 500 0.8 0.6 250 h 0.4 0.2 -55°C +25°C +100°C +175°C 1.6 750 1.4 - (Volts) - Normalised Gain 1.2 0.01 IC - Collector Current (Amps) VCE=2V IC/IB=100 1.6 - (Volts) 1.2 V 1.4 0.6 0.1 -25 VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -3 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg -40 V -25 -35 V IC=-10mA* V(BR)EBO -5 -8.5 V IE=-100µ A -0.1 10 µA µA VCB=-15V VCB=-15V, Tamb=100°C -0.1 µA VEB=-4V 0.4 0.01 0.1 1 10 1 0.1 0.4 0.2 0.01 0.1 DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area VBE(on) v IC 3 - 247 W °C -25 100 IC=-100µ A Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO Saturation Voltages VCE(sat) -0.15 -0.25 V -0.30 -0.45 V -0.30 -0.50 V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* VBE(sat) -0.8 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 200 100 Transition Frequency fT 100 Input Capacitance Cibo 225 pF Output Capacitance Cobo 25 pF VCB=-10V, f=1MHz Switching Times ton toff 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V 10 10 2 -55 to +150 V(BR)CEO 0.8 VBE(sat) v IC 1 VCBO SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. hFE v IC 0.1 V Collector-Base Voltage Collector-Emitter Voltage V(BR)CBO IC - Collector Current (Amps) 0.01 UNIT Breakdown Voltages 0.8 0 VALUE PARAMETER 1.0 0 SYMBOL 1.0 0 VCE=2V B 1.2 IC - Collector Current (Amps) -55°C +25°C +100°C FZT689B FZT789A PARAMETER 0.6 10 1 E C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.2 0.01 C ABSOLUTE MAXIMUM RATINGS. 0.2 0 10 - Typical Gain 1.4 COMPLEMENTARY TYPE PARTMARKING DETAIL - 0.4 +100°C +25°C -55°C 1.6 IC/IB=100 1.0 0.8 0.2 0 -55°C +25°C +100°C +175°C 1.6 - (Volts) 1.4 1.2 IC/IB=100 IC/IB=40 IC/IB=10 V V - (Volts) 1.6 FZT789A ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 200 at IC=2 Amps and very low saturation voltage APPLICATIONS * Battery powered circuits, fast charge converters TYPICAL CHARACTERISTICS 1.8 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR -1.0 800 IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* MHz IC=-50mA, VCE=-5V, f=50MHz VEB=-0.5V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 246