SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL - T13 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 100 mA Peak Collector Current (25ns Pulse Width) ICM 50 A Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CES 150 TYP. MAX. V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) 50 V IC=10mA Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=100µA µA VCB=120V Collector Cut-Off Current ICBO 0.1 Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.15 V IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) 0.8 V IC=10mA, IB=1mA Current in Second Breakdown (Pulsed) IUSB 22 31 A A VC=110V, CCE=4.7nF* VC=130V, CCE=4.7nF* Static Forward Current Transfer Ratio hFE 50 IC=10mA, VCE=10V *Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB) monitor circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop ZUMT413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 2.5 nH Standard SOT323 leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF VCB=10V, IE=0 f=1MHz . TYPICAL CHARACTERISTICS I( - Avalanche Current (A) 50 CCE 40 Tamb=25°C IB=5mA/ns =2x4.7nF CE=4.7nF C p.r.f.=10KHz 30 CE=2.2nF C 20 CE=1.0nF C 10 0 0 50 100 150 VS - Supply Voltage (V) 200 250