SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT596 ISSUE 3 - NOVEMBER 1995 FMMT596 ✪ PARTMARKING DETAIL 596 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C 0.3 0.2 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 0.1 0 B IC/IB=10 0.3 IC/IB=10 IC/IB=50 0.1 1mA 10mA 100mA 1A 0 10mA 1mA 100mA 1A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 320 1.0 VCE=10V +100 ° C IC/IB=10 +25 °C -55 °C +25 °C +100 ° C 0.4 80 0.2 0 1mA 10mA 100mA 1A 0 10mA 1mA IC-Collector Current hFE V IC 1.0 100mA 1A IC-Collector Current VBE(sat) v IC 1 VCE=10V SYMBOL VALUE UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.3 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER 0.6 160 -55 °C PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 240 E C SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -220 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -200 V IC=-10mA* -5 Emitter-Base Breakdown Voltage V(BR)EBO V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-200V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Cut-Off Current ICES -100 nA VCES=-200V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.35 V V IC=-100mA,IB=-10mA IC=-250mA, IB=-25mA* VBE(sat) -1.0 V IC=-250mA,IB=-25mA* Base-Emitter Turn-on Voltage VBE(on) -0.9 V IC=-250mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 0.8 0.1 0.6 0.4 0.2 0 1mA 10mA 100mA DC 1s 100ms 10ms 1ms 100µs 0.01 -55 °C +25 ° C +100 °C 1A IC-Collector Current VBE(on) v IC 0.001 0.1V 1V 10V 100V VCE - Collector Emitter Voltage (V) Safe Operating Area 1000V 100 100 85 35 300 150 Transition Frequency fT Output Capacitance Cobo IC=-1mA, VCE=-10V IC=-100mA,VCE=-10V* IC=-250mA,VCE=-10V* IC=-400mA,VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 144 3 - 143 VCB=-10V, f=1MHz SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT596 ISSUE 3 - NOVEMBER 1995 FMMT596 ✪ PARTMARKING DETAIL 596 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C 0.3 0.2 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 0.1 0 B IC/IB=10 0.3 IC/IB=10 IC/IB=50 0.1 1mA 10mA 100mA 1A 0 10mA 1mA 100mA 1A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 320 1.0 VCE=10V +100 ° C IC/IB=10 +25 °C -55 °C +25 °C +100 ° C 0.4 80 0.2 0 1mA 10mA 100mA 1A 0 10mA 1mA IC-Collector Current hFE V IC 1.0 100mA 1A IC-Collector Current VBE(sat) v IC 1 VCE=10V SYMBOL VALUE UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.3 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER 0.6 160 -55 °C PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 240 E C SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -220 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -200 V IC=-10mA* -5 Emitter-Base Breakdown Voltage V(BR)EBO V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-200V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Cut-Off Current ICES -100 nA VCES=-200V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.35 V V IC=-100mA,IB=-10mA IC=-250mA, IB=-25mA* VBE(sat) -1.0 V IC=-250mA,IB=-25mA* Base-Emitter Turn-on Voltage VBE(on) -0.9 V IC=-250mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 0.8 0.1 0.6 0.4 0.2 0 1mA 10mA 100mA DC 1s 100ms 10ms 1ms 100µs 0.01 -55 °C +25 ° C +100 °C 1A IC-Collector Current VBE(on) v IC 0.001 0.1V 1V 10V 100V VCE - Collector Emitter Voltage (V) Safe Operating Area 1000V 100 100 85 35 300 150 Transition Frequency fT Output Capacitance Cobo IC=-1mA, VCE=-10V IC=-100mA,VCE=-10V* IC=-250mA,VCE=-10V* IC=-400mA,VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 144 3 - 143 VCB=-10V, f=1MHz