TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts D D D D D D Power Amplifier Driver Independent Power-Up/-Down Functions 3.75 -V Operation Low Current Consumption Serial Data Interface 48-Pin Plastic Quad Flatpack (PFB) description The TRF3520 radio frequency (RF) modulator/amplifier is a single-chip RF integrated circuit (IC) suitable for 900-MHz wireless global system for mobile communications (GSM) applications. It combines a direct conversion RF in-phase/quadrature-phase (I/Q) modulator, a single-sideband suppressed carried (SSB) mixer, an RF filter, a power amplifier (PA) driver, a buffered voltage-controlled oscillator (VCO), and a serial interface into one small package. Very few external components are required. During idle operation, the individual functional elements may be selectively placed in standby mode for minimum power consumption. DB2_VCC DIG_VCC DIG_CLK DIG_STR DIG_DAT DIG_GND TXO_VCC TXO_GND TXO_SYN NC DB2_GND DB2_OUT PFB PACKAGE (TOP VIEW) 48 47 46 45 44 43 42 41 40 39 38 37 TXO_TNK2 TXO_TNK1 TXO_GND NC NC NC PSUB NC DRV_GND DRV_OUT– DRV_OUT+ DRV_GND 1 36 2 35 3 34 4 33 5 32 6 31 7 30 8 29 9 28 10 27 11 26 12 25 TXM_VCC TXM_GND TXM_LO+ TXM_LO– TXM_GND TXM_GND NC PH2 PH1 MOD_GND MOD_VCC MOD_GND DRV_GND DRV_VCC DRV_GND NC VBG_IN NC VBG_OUT I+ I– MOD_GND Q+ Q– 13 14 15 16 17 18 19 20 21 22 23 24 NC – No internal connection These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the gates. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 1998, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 functional block diagram TXM_LO+ TXM_LO– I+ I– 34 33 20 Power Amplifier Driver 21 ∑ 0° DRV_OUT+ 11 To External Band-Pass Filter, Power Amplifier, and Duplexer DRV_OUT– 10 + – 90° Q+ Q– Band-Pass Filter (BPF) 23 Single-Sideband Transmit Mixer 24 Buffer I/Q Modulator TXO_TNK2 1 External Transmit 2 Tank IF VCO Buffer 46 TXO_TNK1 To SYNTH (TXO_SYN) Serial Interface 41 40 39 38 37 DIG_GND Divide-by-Two Output (DB2_OUT) DIG_DAT 43 DIG_STR Low-Pass Filter (LPF) DIG_CLK ÷2 Limiter DIG_VCC Buffer transmit IF VCO The transmit intermediate frequency (IF) VCO generates a CW signal in the 200-MHz range. The IF VCO frequency is controlled by applying voltage to the required external tank varactors. Through on-chip buffers, the transmit IF VCO output is sent to the SSB transmit mixer and divide-by-two functional blocks, as well as to an external synthesizer where the transmit IF VCO frequency is controlled and phase locked. The error signal generated by the synthesizer is sent to the transmit IF VCO varactors’ tuning port, completing the phase-locked loop (PLL) function. The VCO is characterized for operation in the 74-MHz to 494-MHz range. divide-by-two This functional block halves the IF VCO frequency and provides a buffered amplitude-limited and low-pass filtered signal, which can become the LO signal for the TRF1020 GSM Receiver IC second down-conversion stage. single-sideband transmit mixer (SSB Tx) The SSB Tx mixer combines an external LO signal with the on-chip transmit IF VCO and performs a down-conversion function. The SSB Tx mixer suppresses the undesired upper sideband signal that is typically generated under the normal mixing process. An internal band-pass filter at the SSB Tx mixer output further reduces the undesired sideband and any spurious signals. This function eliminates the use of any external filtering. The LO is characterized for operation in the 990-MHz to 1400-MHz range. I/Q modulator The modulator provides direct I/Q modulation from baseband to RF. The differential baseband I/Q input signals also provide DC bias to the modulator. A nominal DC voltage of 1.35 V at the I and Q ports is required. Other types of complex I/Q modulations are possible with the TRF3520, but the device is optimized to meet GSM requirements. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 power amplifier driver output The I/Q modulator output is fed to the power amplifier driver, which is a high-gain, low-distortion, fixed gain amplifier. Its differential output can be converted to single-ended by a simple LC impedance-matching network and a 4:1 balun. serial control interface The serial control interface provides power-up and power-down capabilities for each of the functional blocks described in the previous paragraphs. The TRF3520 device register is manipulated using a synchronous serial data port. The timing relationships are defined in Figure 1. One 17-bit word is clocked into a temporary holding register with the least significant bit clocked first. The operation register is loaded with the new data residing in the temporary registers using the rising edge of the strobe input. The format of the control word is described in Table 1. Bits zero through two are reserved for future use. Bits three through seven are power conservation bits. Bits eight through 16 are reserved. Table 1. Control Word Bit Assignments BIT FUNCTION FUNCTIONAL IF 0 Reserved – 1 Reserved – 2 Reserved – 3 Transmit oscillator and buffer amplifiers 1 4 Transmit mixer, LO buffer amplifier 1 5 Modulator 1 6 PA driver amplifier 1 7 Divide-by-two and limiter 1 8 Reserved – 9 Reserved – 10 Reserved – 11 Reserved – 12 Reserved – 13 Reserved – 14 Reserved – 15 Reserved – 16 Reserved – POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 Terminal Functions TERMINAL NAME DESCRIPTION DB2_GND 44 – Divide-by-two circuitry ground DB2_OUT 43 O Divide-by-two frequency output DB2_VCC DIG_CLK 42 – Divide-by-two circuitry bias supply 40 I Digital clock input DIG_DAT 38 I Digital serial data input DIG_GND 37 – Digital ground DIG_STR 39 I Data strobe DIG_VCC DRV_GND 41 – Digital supply 9, 12, 13, 15 DRV_OUT + 11 O PA driver noninverting output DRV_OUT – 10 O PA driver inverting output DRV_VCC MOD_GND 14 – PA driver bias supply PA driver ground 22, 25, 27 Modulator ground I+ 20 I Noninverting in-phase input I– 21 I Inverting in-phase input Q+ 23 I Noninverting quadrature input Q– 24 I Inverting quadrature input MOD_VCC NC 26 – Modulator supply PSUB 4 I/O NO. 4, 5, 6, 8, 16,18, 30, 45 No internal connection 7 TXO_GND 3, 47 – Transmit VCO ground TXO_SYN 46 O Buffered transmit VCO output TXO_TNK1 2 – Transmit VCO tank connection 1 TXO_TNK 2 1 – Transmit VCO tank connection 2 TXO_VCC 48 – Transmit VCO supply TXM_GND 31 – Transmit mixer ground TXM_GND 32 – Transmit mixer ground TXM_GND 35 – Transmit mixer ground TXM_LO + 34 I Transmit mixer LO noninverting input TXM_LO – 33 I Transmit mixer LO inverting input TXM_VCC PH1 36 – Transmit mixer supply 28 – Phase adjustment resistor 1 PH2 29 – Phase adjustment resistor 2 VBG_IN 17 Band gap input VBG_OUT 19 Band gap output POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage range: VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 5.5 V Input voltage to any other pin: VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to (VCC + 0.3) V Power dissipation, TA = 25°C, 48-pin PQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW Maximum operating junction temperature: TJmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C Operating ambient temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85 °C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150 °C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. recommended operating conditions HIgh-level input voltage, VIH Low-level input voltage, VIL Supply voltage, VCC Operating free-air temperature,TA MIN MAX UNIT 2.0 VCC 0.8 V – 0.3 3.6 3.9 V – 40 85 °C V typical power consumption at 3.75 V (continuous operation) MODULE OPERATING CURRENT STANDBY CURRENT OPERATING POWER STANDBY POWER 8 mA <10 µA 30 mW <38 µW Transmit mixer (SSBM) 50 mA <10 µA 188 mW <38 µW Modulator 18 mA PA driver amplifier 45 mA <10 µA 169 mW <38 µW Divide-by-two + LPF 10 mA <10 µA 38 mW <38 µW Control logic 50 µA <50 µA 492 mW <152 µW Transmit oscillator Total 131 mA POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) transmit IF VCO VCC = 3.75 V, TA = 25°C, ZO = 100 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS Frequency range Zload = 100 Ω 200-kHz offset Output power (See Note 1) Phase noise Active mode DC current MIN TYP MAX UNIT 141 194 247 MHz – 20 – 15 dBm –110 dBc/Hz 8 Standby mode mA 10 µA Power-up time (See Note 2) 10 µs Power-down time 10 µs NOTES: 1. Measured at buffer output pin labeled TXO_SYN 2. Includes oscillator starting time. This time is measured starting at strobe transition to high; there is additional time after a reset, i.e., applying VCC to the circuit. 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 transmit mixer, I/Q modulator and PA driver PLO = –10 dBm, VCC = 3.75 V, TA = 25°C, ZO = 50 Ω (unless otherwise specified) PARAMETER TEST CONDITIONS LO input frequency range MIN TYP 1070 LO input power level –12 PA driver RF output 880 PA driver RF output power level See Note 7 Unwanted TX mixer sideband suppression at 1462 to 1497 MHz LO = 1074 to 1109 MHz 35 DSB IM suppression UNIT 1110 MHz –8 dBm 915 MHz 6 dBm 45 dBc See Note 3 20 Carrier suppression See Note 4 30 35 dBc Sideband suppression See Note 4 35 45 dBc Modulator and PA driver spurious outputs I/Q input voltage range (differential) Third order –10 MAX dBc 100 kHz to 500 MHz See Note 5 500 to 850 MHz See Note 5 880 to 915 MHz Offset 925 to 935 MHz See Note 5 85 935 to 960 MHz See Note 5 82 960 to 1000 MHz See Note 5 49 1000 to 1350 MHz See Note 5 1350 to 1500 MHz See Note 5 38 1500 to 1805 MHz See Note 5 23 1805 to 1880 MHz See Note 5 54 1880 to 12000 MHz See Note 5 36 w600 kHz (see Note 5) Each differential line 35 30 32 69 30 39 0.0 I/Q offset dBc 1.80 5 I/Q common mode voltage See Note 6 1.25 I/Q input impedance (differential) See Note 8 10 kΩ I/Q input impedance (single–ended) See Note 8 10 kΩ I/Q input frequency range 0 Power-up time Power-down time PA driver output broadband noise 1.35 ± 10 MHz, PA driver output =+ 6 dBm 1.45 VPP mV 2 V MHz 10 µs 10 µs –131 dBc/Hz NOTES: 3. Fout = 880 to 915 MHz, VI/Q = 1.40 VPP , 67.7 kHz sine wave. I & Q in-phase. Intermodulation suppression with respect to desired sideband level 4. Fout = 880 to 915 MHz, VI/Q = 1.40 VPP , 67.7 kHz sine wave. I & Q in quadrature-phase. Carrier and undesired sideband suppression with respect to desired sideband level 5. VI/Q = 1.40 Vpp, 67.7 kHz sinewave. I & Q in quadrature-phase. 6. The TCM4400 provides for a common-mode voltage of 1.35 ± 0.1 V or VCC/2 (software selectable) 7. Includes 1-dB loss associated with external balun 8. Specified by design. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 transmit mixer, I/Q modulator and PA driver PLO = –10 dBm, VCC = 3.75 V, TA = 25°C, ZO = 50 Ω (unless otherwise specified) (continued) divide-by-two VCC = 3.75 V, TA = 25°C, Zo=50 Ω (unless otherwise specified) PARAMETER TEST CONDITIONS Input frequency range MIN TYP MAX UNIT 141 194 247 MHz –25 FDB2_IN/2 –20 –10 dBm Output frequency DC current Zload = 100 Ω Active mode DC current Standby mode Output power (see Note 8) 10 mA 10 µA NOTE 9: Measured at buffer output pin labeled DB2_OUT serial interface timing requirements with VCC = 3.75 V, TA = 25°C, ZO = 50 Ω (unless otherwise specified) (see Figure 1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 20 MHz 8 ns Ri CLOCK, DATA and STROBE input resistance fclock t(r) t(f) CLOCK frequency tw(High) tw(Low) Pulse duration, CLOCK high 20 ns Pulse duration, CLOCK low 20 ns Data setup time before CLOCK high 20 ns Strobe setup time before CLOCK high 20 ns Data hold time after CLOCK high 20 ns Strobe hold time after CLOCK high 20 ns tsu th 10 kΩ 0 CLOCK input rise and fall time 2 REF_IN tw(pulse) Strobe pulse width duration ns PARAMETER MEASUREMENT INFORMATION Data Valid DATA Data Change D0 D1 tsu D22 th – VIH D23 – VIL tw(High) – VIH CLOCK – VIL tsu tw(Low) th tw(pulse) STROBE – VIH – VIL Clock Enabled Shift in Data Figure 1. TRF3520 Timing Relationships 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 Clock Disabled Store Data TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 TYPICAL CHARACTERISTICS Typical GSM RF modulator characteristics were evaluated using a VCO frequency of 194 MHz and LO frequency of 1094 MHz. The range of operation is specified in the document and is therefore customer specific. PA DRIVER OUTPUT POWER vs TEMPERATURE PA DRIVER OUTPUT POWER vs LO FREQUENCY 9 9 –40°C 8 VCC = 3.9 V PA Driver Output Power – dBm PA Driver Output Power – dBm 8 VCC = 3.75 V 7 6 VCC = 3.6 V 5 4 7 25°C 6 5 85°C 4 3 –60 –40 –20 60 0 20 40 T – Temperature – °C 80 3 1060 100 1070 1080 1090 1100 1110 1120 LO Frequency – MHz Figure 3 Figure 2 PA DRIVER OUTPUT POWER vs LO POWER TOTAL SUPPLY CURRENT, ICC vs TEMPERATURE 8.5 138 –40°C I CC – Total Supply Current – mA PA Driver Output Power –dBm 8 7.5 7 25°C 6.5 6 5.5 VCC = 3.9 V 134 VCC = 3.75 V 132 130 128 VCC = 3.6 V 126 124 5 85°C 4.5 4 –13 136 122 –11 –9 –7 120 –50 LO Power In – dBm 50 0 T – Temperature – °C 100 Figure 5 Figure 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 TYPICAL CHARACTERISTICS CARRIER SUPPRESSION vs TEMPERATURE CARRIER SUPPRESSION vs LO INPUT POWER –38 38 –40°C Carrier Suppression – dBc Carrier Suppression – dBc VCC = 3.9 V –37 VCC = 3.75 V –36 VCC = 3.6 V –35 37 36 25°C 35 85°C –34 –60 –40 –20 0 20 40 60 T – Temperature – °C 80 34 –13 100 –12 CARRIER SUPPRESSION vs LO FREQUENCY –8 –7 38 39 –40°C Carrier Suppression – dBc Carrier Suppression – dBc –9 CARRIER SUPPRESSION vs I/Q DC OFFSET 40 38 –40°C 37 36 25°C 35 85°C 37 36 25°C 35 85°C 34 1075 1085 1105 1095 1115 34 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 LO Frequency – MHz I/Q DC Offset – V Figure 9 Figure 8 10 –10 Figure 7 Figure 6 33 1065 –11 LO Input Power – dBm POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 TYPICAL CHARACTERISTICS DSB IM SUPPRESSION vs LO FREQUENCY SIDEBAND SUPPRESSION vs TEMPERATURE –48 29.5 29 85°C –46 Sideband Suppression – dBc DSB IM Suppression – dBc 28.5 28 27.5 27 –40°C 26.5 26 25°C 25.5 25 VCC 3.9 V VCC 3.75 V –44 –42 VCC 3.6 V –40 –38 –36 24.5 24 1060 1070 1100 1080 1090 LO Frequency – MHz 1110 –34 –50 1120 SIDEBAND SUPPRESSION vs LO INPUT POWER SIDEBAND SUPPRESSION vs LO FREQUENCY 48 48 Sideband Suppression – dBc Sideband Suppression – dBc 42 25°C 40 38 85°C 44 42 25°C 40 38 85°C 36 34 34 32 1060 –40°C 46 –40°C 44 36 100 Figure 11 Figure 10 46 50 0 T – Temperature – °C 1080 1100 1120 32 –13 –11 –9 –7 LO Input Power – dBm LO Frequency – MHz Figure 13 Figure 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 TYPICAL CHARACTERISTICS LO FEEDTHROUGH TO DRV_OUT vs TEMPERATURE VCO OUTPUT POWER vs TEMPERATURE –38 –10 –10.5 VCC = 3.75 V VCO Output Power – dBm LO Feedthrough to DRV_OUT – dBc VCC = 3.9 V –39 –40 VCC = 3.6 V –41 –42 VCC = 3.9 V –11.5 VCC = 3.6 V –12 –40 –20 0 20 40 60 T – Temperature – °C 80 –13 –60 –40 100 –20 60 0 20 40 T – Temperature – °C Figure 15 Figure 14 DB2 OUTPUT POWER vs TEMPERATURE –16 DB2 Output Power – dBm –16.5 –17 VCC = 3.6 V VCC = 3.75 V –17.5 –18 –18.5 VCC = 3.9 V –19 –19.5 –20 –60 –40 –20 60 0 20 40 T – Temperature – °C Figure 16 12 VCC = 3.75 V –12.5 –43 –44 –60 11 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 80 100 80 100 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 APPLICATION INFORMATION Table 2. TRF3520 Application Board Parts List DESIGNATORS DESCRIPTION VALUE SIZE MANUFACTURER C1, 2, 3, 15 Capacitor 10 pF QTY 4 0603 Murata GRM39COG Series MANUFACTURER P/N C4, 5, 8, 10, 12, 14, 19, 32, 36, 37 Capacitor .01 µF 10 0603 Murata GRM39COG Series C6, 23, 26, 30, 35 Capacitor 1000 pF 5 0603 Murata GRMX7R Series C7, 9, 11, 25, 28, 29, 33, 34, 38 Capacitor 100 pF 9 0603 Murata GRM1R8X7R Series C13, 31 Capacitor 10 µF 2 C Panasonic C16 Capacitor 22 pF 1 0603 Murata GRM39COG Series C17 Capacitor 8 pF 1 0603 Murata GRM39COG Series C18 Capacitor 7 pF 1 0603 Murata GRM39COG Series C20, 22 Capacitor 15 pF 2 0603 Murata GRM39COG Series ECS–T1DC106R C21 Capacitor 4.7 pF 1 0603 Murata GRM39COG Series C24, 27 Capacitor 1.8 pF 2 0603 Murata GRM39COG Series C39 Capacitor 1.5 pF 1 0603 Murata GRM39COG Series L1 Inductor 100 nH 1 0603 Toko LL1608–FR10K L2 Inductor 47 nH 1 0603 Toko LL1608–F47NK L3 Inductor 56 nH 1 0603 Toko LL1608–F56NK L4, 5 Inductor 6.8 nH 2 0603 Toko LL1608–F6N8K J1, 3, 5, 6, 11 SMA connector 5 EF Johnson 142–0701–801 J2 Connector 1 Amp P1, P2, P3 Connector 3 Molex J7, 8, 9, 10 BNC connector R2, 4, 6 Resistor R3 ,5, 7 Resistor W 1.5 kW R8, 9, 10, 12, 18, 20 Resistor R13, 14 Resistor R15, 16 Resistor R22 Resistor U1 IC 1 TI Varactor Varactor 2 Motorola MMBV2109LT1 T1 4:1 Balun 1 MA/COM ETC1.6–4–2–3 1.0 k 4 Amp 747250–4 46F522 413631–1 3 0603 Panasonic P1.0KGCT–ND 3 0603 Panasonic P1.5KGCT–ND 0 6 0603 Panasonic P0.0GCT–ND 220 2 0603 Panasonic P220GCT–ND 2 0603 Panasonic P47KGCT–ND 1 0603 Digikey P2.0KGCT–ND W 2 kW 47 k POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TRF3520 13 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 APPLICATION INFORMATION J11 TXM_LO R2 VCC C10 .01 µ F 1k VCC L1 C15 C16 10 pF 100 nH C36 .01 µ F DB2_OUT 22 pF C5 .01 µ F WORD_OUT TP1 J3 TXO_SYN 1 C17 8.0 pF C37 .01 µ F C19 .01 µ F SMA 23 22 40 21 20 17 46 47 C6 C35 1000 pF 1000 pF 15 14 48 13 1 R9 0 P3 2 + C32 .01 µ F C20 15 pF C31 10 µ F 1 P2 2 R8 0 + L4 C14 .01 µ F L5 C22 15 pF C25 100 pF VCO_TUNE P1 2 J5 SMA Figure 17. TRF3520 Application Board Schematic 14 POST OFFICE BOX 655303 I+ J7 BNC R 22 2k VCC 1.8 pF C24 C8 .01 µ F 3 2 1 C34 100 pF C28 4 DRV_OUT 100 pF 5 C39 1.5 pF ECT 1.6–4–2–3 VCC C38 100 pF 1 C23 1000 pF J8 BNC R20 1.8 pF R16 47 k C13 10 µ F I– R21 0 C7 100 pF 6.8 nH 6.8 nH 4.7 pF CR1 CR2 3 1 1 3 R15 47 k R18 TP2 MMBV2109 MMBV2109 VCC J9 BNC R19 0 DNP C27 L3 56 nH C21 DIG_VCC Q+ 16 1 R14 220 C18 7.0 pF 19 18 U1 TRF3520 44 45 VCC L2 47 nH 25 24 38 39 42 43 J1 SMA 37 41 DIG_VCC R13 220 27 26 36 C4 .01 µ F J10 BNC R17 0 DNP 12 9 Q– R12 10 11 J2:I C11 100 pF C3 10 pF 28 C12 .01 µ F 1k R7 1.5 k R10 R11 0 DNP 29 3 C33 100 pF C30 1000 pF 8 9 R6 C9 100 pF C29 100 pF VCC C2 10 pF 31 30 J2:C R5 1.5 k 7 R4 5 C1 10 pF 33 32 J2:E R3 1.5 k 5 6 1k 35 34 2 2 3 4 J2:B SMA • DALLAS, TEXAS 75265 C26 1000 pF R11, R17, R19, R21 = DNP (DO NOT PLACE) J6 SMA TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 APPLICATION INFORMATION The TRF3520 combines RF, IF, and digital signals. In order to obtain maximum performance, follow correct RFpwb layout procedures. J11 P3 P2 C13 C31 + J10 R11 R10 TXM_LO TRF3520 DEMO BOARD, EVM REV: A COPYRIGHT: TEXAS INS. 1998 + C14 C32 Q– R9 J9 R17 R12 J2 J1 C38 C10 C33 C11 C28 DB2_OUT Q+ R19 R18 L1 C15 R13 C38 C37 C19 TXO_SYN R22 C8 C34 C17 L2 C18 R14 C21 C36 R15 CR1 C20 P1 T1 C27 C26 C39 J6 J7 I+ C28 CR2 C25 C24 R16 C38 L3 VCO_TUNE L5 L4 C22 J5 C23 I– R21 R20 J3 J8 DRV_OUT C16 U1 Figure 18. TRF3520 Application Board Layout POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15 TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 MECHANICAL DATA PFB (S-PQFP-G48) PLASTIC QUAD FLATPACK 0,27 0,17 0,50 36 0,08 M 25 37 24 48 13 0,13 NOM 1 12 5,50 TYP 7,20 SQ 6,80 9,20 SQ 8,80 Gage Plane 0,25 0,05 MIN 0°– 7° 1,05 0,95 Seating Plane 0,75 0,45 0,08 1,20 MAX 4073176 / B 10/96 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. C. Falls within JEDEC MS-026 16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. 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