HY62U8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA => 30mA Jul.29.2000 Final 04 Change the Notch Location of sTSOP - Left-Top => Left-Center Sep.04.2000 Final 05 Marking Information Add Revised - AC Test Condition Add : 5pF Test Load - VIH max : Vcc + 0.2V => Vcc + 0.3V Dec.04.2000 Final 06 Changed Logo - HYUNDAI -> hynix - Marking Information Change Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 06 / Apr. 2001 Hynix Semiconductor Y62U8200B Series DESCRIPTION FEATURES The HY62U8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62U8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V. • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup( LL-part ) -. 2.0V(min) data retention • Standard pin configuration -. 32-sTSOPI-8X13.4, 32-TSOPI -8X20 (Standard and Reversed) Product Voltage Speed Operation No. (V) (ns) Current/Icc(mA) HY62U8200B 2.7~3.3 70*/85/100 5 HY62U8200B-E 2.7~3.3 70*/85/100 5 HY62U8200B-I 2.7~3.3 70*/85/100 5 Note 1. Blank : Commercial, E : Extended, I : Industrial 2. Current value is max. 3. * measured with 30pF test load Standby Current(uA) 25 25 25 Temperature (°C) 0~70 -25~85(E) -40~85(I) PIN CONNECTION A11 A9 A8 A13 /WE CS2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TSOP-I (Standard) /OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3 A11 A9 A8 A13 /WE CS2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 sTSOP-I (Standard) PIN DESCRIPTION A0 DATA I/O BUFFER WRITE DRIVER MEMORY ARRAY 256K x 8 I/O1 I/O8 CONTROL LOGIC CS2 /WE /OE SENSE AMP A17 /CS1 Rev 06 / Apr. 2001 ROW DECODER COLUMNDECODER Pin Function Chip Select 1 Chip Select 2 Write Enable Output Enable Address Input Data Input/Output Power(2.7V~3.3V) Ground BLOCK DIAGRAM ADD INPUT BUFFER Pin Name /CS1 CS2 /WE /OE A0 ~ A17 I/O1 ~ I/O8 Vcc Vss /OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3 2 Y62U8200B Series ORDERING INFORMATION Temp. Part No. Speed Power HY62U8200BLLT1 70*/85/100 LL-part HY62U8200BLLR1 70*/85/100 LL-part HY62U8200BLLST 70*/85/100 LL-part HY62U8200BLLSR 70*/85/100 LL-part HY62U8200BLLT1-E 70*/85/100 LL-part E HY62U8200BLLR1-E 70*/85/100 LL-part E HY62U8200BLLST-E 70*/85/100 LL-part E HY62U8200BLLSR-E 70*/85/100 LL-part E HY62U8200BLLT1-I 70*/85/100 LL-part I HY62U8200BLLR1-I 70*/85/100 LL-part I HY62U8200BLLST-I 70*/85/100 LL-part I HY62U8200BLLSR-I 70*/85/100 LL-part I Note 1. Blank : Commercial, E : Extended, I : Industrial 2. * measured with 30pF test load. Package TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed) TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed) TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed) ABSOLUTE MAXIMUM RATING (1) Symbol VIN, VOUT VCC Parameter Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Operating Temperature TA Rating -0.2 to 3.9 -0.2 to 4.0 Unit V V Remark 0 to 70 -25 to 85 -40 to 85 -55 to 150 1.0 50 260 • 5 °C °C °C °C W mA °C•sec HY62U8200B HY62U8200B-E HY62U8200B-I TSTG Storage Temperature PD Power Dissipation IOUT Data Output Current TSOLDER Lead Soldering Temperature & Time Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. TRUTH TABLE /CS1 H X L L L CS2 X L H H H /WE X X H H L /OE X X H L X Mode Deselected Deselected Output Disabled Read Write I/O High-Z High-Z High-Z Dout DIN Power Standby Standby Active Active Active Note : 1. H=VIH, L=VIL, X=don't care(VIH or VIL) Rev 06 / Apr. 2001 2 Y62U8200B Series RECOMMENDED DC OPERATING CONDITION Parameter Min. Symbol Vcc Supply Voltage 2.7 Vss Ground 0 VIH Input High Voltage 2.2 VIL Input Low Voltage -0.3(1) Note 1. VIL = -1.5V for pulse width less than 30ns Typ. 3.0 0 - Max. 3.3 0 Vcc+0.3 0.4 Unit V V V V DC ELECTRICAL CHARACTERISTICS Vcc= 2.7V~3.3V, TA = 0°C to 70°C/ -25°C to 85°C (E)/ -40°C to 85°C (I), unless otherwise specified Sym. Parameter Test Condition Min. Typ. ILI Input Leakage Current Vss < VIN < Vcc -1 ILO Output Leakage Current Vss < VOUT < Vcc, /CS1 = VIH or -1 CS2 = VIL or /OE = VIH or /WE = VIL Icc Operating Power Supply /CS1 = VIL, CS2 = VIH, Current VIN = VIH or VIL, II/O = 0mA ICC1 Average Operating Min Duty Cycle = 100%, Current /CS1 = VIL CS2 = VIH VIN = VIH or VIL Cycle time = 1us, II/O = 0Ma, /CS1 < 0.2V, CS2 > Vcc - 0.2V VIN < 0.2V or VIN > Vcc – 0.2V ISB TTL Standby Current /CS1 = VIH or CS2 = VIL, (TTL Input) VIN = VIH or VIL /CS1 > Vcc - 0.2V or CS2 < 0.2V, ISB1 Standby HY62U8200B Current HY62U8200B-E VIN > Vcc - 0.2V or (CMOS Input) HY62U8200B-I VIN < Vss + 0.2V VOL Output Low Voltage IOL = 2.1mA VOH Output High Voltage IOH = -1.0mA 2.2 - Max. 1 1 Unit uA uA 5 mA 30 mA 6 mA 0.5 mA 25 25 25 0.4 - uA uA uA V V Note : Typical values are at Vcc = 3.0V, TA = 25°C CAPACITANCE (Temp = 25°C, f= 1.0MHz) Symbol Parameter CIN Input Capacitance COUT Output Capacitance Condition VIN = 0V VI/O = 0V Max. 8 10 Unit pF pF Note : These parameters are sampled and not 100% tested Rev 06 / Apr. 2001 3 Y62U8200B Series AC CHARACTERISTICS Vcc= 2.7V~3.3V, TA = 0°C to 70°C/ -25°C to 85°C(E)/ -40°C to 85°C(I), unless otherwise specified -70* -85 -10 # Symbol Parameter Min. Max. Min. Max. Min. Max. READ CYCLE 1 tRC Read Cycle Time 70 85 100 2 tAA Address Access Time 70 85 100 3 tACS Chip Select Access Time 70 85 100 4 tOE Output Enable to Output Valid 40 45 50 5 tCLZ Chip Select to Output in Low Z 10 10 10 6 tOLZ Output Enable to Output in Low Z 5 5 5 7 tCHZ Chip Deselection to Output in High Z 0 20 0 25 0 30 8 tOHZ Out Disable to Output in High Z 0 20 0 25 0 30 9 tOH Output Hold from Address Change 15 15 15 WRITE CYCLE 10 tWC Write Cycle Time 70 85 100 11 tCW Chip Selection to End of Write 60 70 80 12 tAW Address Valid to End of Write 60 70 80 13 tAS Address Set-up Time 0 0 0 14 tWP Write Pulse Width 50 60 70 15 tWR Write Recovery Time 0 0 0 16 tWHZ Write to Output in High Z 0 20 0 25 0 30 17 tDW Data to Write Time Overlap 30 35 40 18 tDH Data Hold from Write Time 0 0 0 19 tOW Output Active from End of Write 5 5 5 Note * measured with 30pF test load Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns AC TEST CONDITIONS TA = 0°C to 70°C / -25°C to 85°C (E)/ -40°C to 85°C (I), unless otherwise specified Parameter Value Input Pulse Level 0.4V to 2.2V Input Rise and Fall Time 5ns Input and Output Timing Reference Level 1.5V Output Load tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW CL = 5pF + 1TTL Load Others CL = 100pF + 1TTL Load CL = 30pF + 1TTL Load Note * : Test load is 30pF for 70ns device. AC TEST LOADS TTL CL(1) Note : 1 Including jig and scope capacitance Rev 06 / Apr. 2001 4 Y62U8200B Series TIMING DIAGRAM READ CYCLE 1(Note1,4) tRC ADDR tAA tOH tACS /CS1 CS2 tCHZ(3) tOE /OE tOLZ(3) Data Out tOHZ(3) tCLZ(3) High-Z Data Valid READ CYCLE 2(Note 1,2,4) tRC ADDR tAA tOH tOH Data Out Previous Data Data Valid READ CYCLE 3(Note 1,2,4) /CS1 CS2 tACS tCLZ(3) Data Out tCHZ(3) Data Valid Notes: 1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS1 and a high CS2. 2. /OE = VIL 3. Transition is measured + 200mV from steady state voltage. This parameter is sampled and not 100% tested. 4. /CS1 in high for the standby, low for active CS2 in low for the standby, high for active Rev 06 / Apr. 2001 5 Y62U8200B Series WRITE CYCLE 1(1,4,5,8) (/WE Controlled) tWC ADDR tWR(2) tCW /CS1 CS2 tAW tWP /WE tAS Data In tDW High-Z tDH Data Valid tWHZ(3,7) tOW (5 ) (6 ) Data Out WRITE CYCLE 1(1,4,5,8) (/CS1, CS2 Controlled) tWC ADDR tCW tAS tWR(2) /CS1 tAW CS2 tWP /WE tDW Data In Data Out Rev 06 / Apr. 2001 High-Z tDH Data Valid High-Z 6 Y62U8200B Series Notes(WRITE CYCLE): 1. A write occurs during the overlap of a low /WE, a low /CS1 and a high CS2. A write begins at the latest transition among /CS1 going now, CS2 going high and /WE going low: A write ends at the earliest transition among /CS1 going high, CS2 low and /WE going high. tWP is measured from the beginning of write to the end of write. . 2. tCW is measured from the later of /CS1 going low or CS2 going high to the end of write . 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR1 is applied in case a write ends as /CS1, or /WE going high, and tWR2 is applied in case a write ends at CS2 going low. 5. If /OE, CS2 and /WE are in the read mode during this period, and the I/O pins are in the output low-Z state, input of opposite phase of the output must not be applied because bus contention can occur. 6. If /CS1 goes low simultaneously with /WE going low, the outputs remain in high impedance state. 7. Dout is the read data of the new address. 8. When /CS1 is low and CS2 is high, I/O pins are in the output state. The input signals in the opposite phase leading to the outputs should not be applied. Rev 06 / Apr. 2001 7 Y62U8200B Series DATA RETENTION ELECTRIC CHARACTERISTIC TA = 0°C to 70°C / -25°C to 85°C (E)/ -40°C to 85°C (I) Symbol Parameter Test Condition VDR Vcc for Data Retention /CS1>Vcc - 0.2V or CS2<0.2V, VIN > Vcc-0.2V or VIN < Vss+0.2V ICCDR Data HY62U8200B Vcc=3.0V, Retention HY62U8200B-E /CS1>Vcc - 0.2V or CS2<0.2V, Current HY62U8200B-I VIN>Vcc - 0.2V or VIN>Vss + 0.2V Tcdr Chip Deselect to Data See Data Retention Timing Retention Time Diagram Tr Operating Recovery Time Min. 2.0 Typ. - Max. - Unit V 0 - 25 25 25 - uA uA uA ns 5 - - ms Notes: 1. Typical values are under the condition of TA = 25°C. DATA RETENTION TIMING DIAGRAM 1 DATA RETENTION MODE VCC 2.7V tCDR tR 2.2V VDR CS1>VCC-0.2V CS1 VSS DATA RETENTION TIMING DIAGRAM 2 DATA RETENTION MODE VCC 2.7V tCDR tR CS2 VDR 0.4V VSS Rev 06 / Apr. 2001 CS2<0.2V 8 Y62U8200B Series PACKAGE INFORMATION 32pin 8x20mm Thin Small Outline Package Standard(T1) #1 #32 UNIT : INCH(mm) 0.319(8.103) 0.311(7.900) #16 #17 0.728(18.491) 0.720(18.288) 0.792(20.117) 0.784(19.914) 0.041(1.05) 0.037(0.95) 0.006(0.15) 0.002(0.05) 0.008(0.21) 0.004(0.10) 0.025(0.64) 0.021(0.54) 0.020(0.50) BSC 0.011(0.27) 0.007(0.17) 32pin 8x20mm Thin Small Outline Package Reversed(R1) #16 #17 UNIT : INCH(mm) 0.319(8.103) 0.311(7.900) #32 #1 0.728(18.491) 0.720(18.288) 0.792(20.117) 0.784(19.914) 0.041(1.05) 0.037(0.95) 0.006(0.15) 0.002(0.05) 0.025(0.64) 0.021(0.54) Rev 06 / Apr. 2001 0.008(0.21) 0.004(0.1) 0.020(0.50) BSC 0.011(0.27) 0.007(0.17) 9 Y62U8200B Series 32pin 8x13.4mm Smaller Thin Small Outline Package Standard(ST) #1 #32 UNIT : INCH(mm) 0.319(8.1) 0.311(7.9) #17 #16 0.468(11.9) 0.460(11.7) 0.536(13.6) 0.520(13.2) 0.041(1.05) 0.037(0.95) 0.008(0.20) 0.002(0.05) 0.008(0.2) 0.004(0.1) 0.024(0.6) 0.016(0.4) 0.020(0.50) 0.011(0.27) 0.007(0.17) 32pin 8x13.4mm Smaller Thin Small Outline Package Reversed(SR) #16 #17 UNIT : INCH(mm) 0.319(8.1) 0.311(7.9) #32 #1 0.468(11.9) 0.460(11.7) 0.536(13.6) 0.520(13.2) 0.041(1.05) 0.037(0.95) 0.008(0.20) 0.002(0.05) 0.024(0.6) 0.016(0.4) Rev 06 / Apr. 2001 0.008(0.2) 0.004(0.1) 0.020(0.50) 0.011(0.27) 0.007(0.17) 10 Y62U8200B Series MARKING INFORMAION Package TSOP-I sTSOP Marking Example h y n i x H Y 6 2 U y y w w p H Y 6 2 U 8 c c S T - s y y w w p 8 2 0 0 B c c T 2 0 0 B s t O R K K O R E A 1 - s s t Index • hynix • KOREA / KOR • HY62U8200B • yy • ww •p • cc • T1 / ST • ss •t Note - Capital Letter - Small Letter Rev 06 / Apr. 2001 : hynix Logo : Origin Country : Part Name : Year ( ex : 00 = year 2000, 01 = year 2001 ) : Work Week ( ex : 12 = ww12 ) : Process Code : Power Consumption -L : Low Power - LL : Low Low Power : Package Type - T1 : TSOP-I - ST : sTSOP : Speed - 70 : 70ns - 85 : 85ns : Temperature - Blank : Commercial ( 0 ~ 70 °C ) -E : Extended ( -25 ~ 85 °C ) -I : Industrial ( -40 ~ 85 °C ) : Fixed Item : Non-fixed Item (Except hynix) 11