Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS(on) Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID104 IDM IAR TC TC TC TC 120 75 480 90 A A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 560 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) G TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque TO-264 0.7/6 Nm/lb.in. PLUS 247 TO-264 Weight 6 10 Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 250 2.0 VGS(th) VDS = VGS, ID = 8mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2002 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 4.0 V D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls ±200 nA TJ = 25°C TJ = 125°C 50 µA 3 mA 22 mΩ Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l 98912 (2/02) IXFK 120N25 IXFX 120N25 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25 Note 1 62 Ciss S 9400 pF 1730 pF Crss 550 pF td(on) 35 ns 38 ns 175 ns 35 ns 400 nC 70 nC 155 nC Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 85 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1.5 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.22 RthJC 0.15 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V 120 A ISM Repetitive; pulse width limited by TJM 480 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM IF = 30A,-di/dt = 100 A/µs, VR = 100 V 0.8 µC 8 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1