IXFH16N90 IXFX16N90 HiPerFETTM Power MOSFETs VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 900 900 V V VGS VGSM Continuous Transient ±20 ±30 V V I D25 IDM I AR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 16 64 16 A A A EAR TC = 25°C 45 mJ dv/dt I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns 360 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C PD TC = 25°C TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque °C 300 Weight 1.13/10 Nm/lb.in. 6 g TO-247 AD (IXFH) (TAB) PLUS 247TM (IXFX) G C (TAB) D Features l l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250µA 900 VGS(th) VDS = VGS, ID = 5 mA 2.0 I GSS VGS = ±20 VDC, VDS = 0 I DSS VDS = 0.8 VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 1998 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4.5 V ±100 nA 25 250 µA µA 0.65 Ω l l l l l l DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages l l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) Space savings High power density 97547(2/98) IXFH 16N90 IXFX 16N90 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 6 Ciss Coss 10 S 4500 pF 430 pF 150 pF 27 ns 30 ns 120 ns 30 ns 220 nC 30 nC 85 nC VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 2 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.35 RthCK K/W 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 16 A ISM Repetitive; pulse width limited by TJM 64 A VSD I F = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr QRM IRM TJ = 25°C TJ = 125°C I F = IS -di/dt = 100 A/µs, VR = 100 V TO-247 AD (IXFH) Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS 247TM Outline 200 n s 350 n s TJ = 25°C TJ = 125°C 1 2 µC µC TJ = 25°C TJ = 125°C 10 15 A A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025