Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS(on)= 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 70 280 70 A A A EAR EAS TC = 25°C TC = 25°C 60 5.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD TC = 25°C 890 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL Symbol Maximum Ratings 1.6 mm (0.063 in.) from case for 10 s Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1mA 600 V VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2003 IXYS All rights reserved ±200 nA TJ = 25°C TJ = 125°C 50 µA 3 mA G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages PLUS 264TM package for clip or spring mounting Space savings High power density 80 mΩ DS99006(02/03) IXFB70N60Q2 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 36 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 50 S 7200 pF 1300 pF 290 pF td(on) 26 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 ns td(off) RG = 1 Ω (External) 60 ns 12 ns 265 nC 57 nC 120 nC tf QG(on) QGS VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 QGD RthJC 0.14 RthCK 0.13 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD trr QRM IRM K/W PLUS 264TM Outline Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 A Repetitive; pulse width limited by TJM 280 A IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns IF = 25A -di/dt = 100 A/µs VR = 100 V 1.2 µC 8 A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 6,306,728B1 5,381,025