IXYS IXFB70N60Q2

Advance Technical Information
HiPerFETTM
Power MOSFETs
IXFB 70N60Q2
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
VDSS = 600 V
ID25 = 70 A
Ω
RDS(on)= 80 mΩ
≤ 250 ns
trr
PLUS 264TM (IXFB)
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
600
600
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
70
280
70
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
5.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
890
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
TL
Symbol
Maximum Ratings
1.6 mm (0.063 in.) from case for 10 s
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 1mA
600
V
VGS(th)
VDS = VGS, ID = 8mA
3.0
5.0 V
IGSS
VGS = ±30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
© 2003 IXYS All rights reserved
±200 nA
TJ = 25°C
TJ = 125°C
50 µA
3 mA
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
PLUS 264TM package for clip or spring
mounting
Space savings
High power density
80 mΩ
DS99006(02/03)
IXFB70N60Q2
Symbol
Test Conditions
gfs
VDS = 10 V; ID = 0.5 • ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 1
36
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
50
S
7200
pF
1300
pF
290
pF
td(on)
26
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
25
ns
td(off)
RG = 1 Ω (External)
60
ns
12
ns
265
nC
57
nC
120
nC
tf
QG(on)
QGS
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
QGD
RthJC
0.14
RthCK
0.13
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
trr
QRM
IRM
K/W
PLUS 264TM Outline
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
70
A
Repetitive;
pulse width limited by TJM
280
A
IF = IS, VGS = 0 V, Note 1
1.5
V
250
ns
IF = 25A
-di/dt = 100 A/µs
VR = 100 V
1.2
µC
8
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025