Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS(on) N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 ID(RMS) IDM IAR TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C 80 75 320 80 A A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC 300 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 1.13/10 Nm/lb.in. 6 g TO-247 AD (IXTH) (TAB) TO-268 (IXTT) Case Style G G = Gate S = Source Features z z z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Advantages z VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved TJ = 25°C TJ = 125°C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Characteristic Values Min. Typ. Max. VDSS V 4.0 V ±100 nA 25 250 µA µA 20 mΩ (TAB) S D = Drain TAB = Drain z z Easy to mount Space savings High power density DS99069(7/03) IXTH 60N10 IXTT 60N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 30 45 S 3200 pF 510 pF C rss 180 pF td(on) 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 ns td(off) RG = 3.3 Ω (External) 70 ns 18 ns 110 nC 18 nC 48 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 K/W K/W Ratings and Characteristics (T J = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = 30A, -di/dt = 100 A/µs, VR = 100V 60 A 240 A 1.5 V 150 ns 3 µC Qrr TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Terminals: 1 - Gate 3 - Source Min Recommended Footprint 2 - Drain Tab - Drain 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343