IXFX 44N50F IXFK 44N50F F-Class: MegaHertz Switching VDSS = 500 V ID25 = 44 A Ω RDS(on) = 120 mΩ Single MOSFET Die trr ≤ 250 ns HiPerRFTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 44 184 44 A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 500 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque TO-264 0.4/6 Nm/lb.in. PLUS 247 TO-264 Weight 6 10 Symbol Test Conditions VDSS VGS = 0 V, ID = 250uA 500 3.0 VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2002 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 5.0 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 120 mΩ G (TAB) D TO-264 AA (IXFK) G D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l PLUS 247TM package for clip or spring mounting l Space savings l High power density 98731A (01/02) IXFK 44N50F IXFX 44N50F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25 Note 1 22 Ciss S 5500 pF 990 pF Crss 330 pF td(on) 23 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 32 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 18 ns td(off) RG = 1 Ω (External) 53 ns 8 ns 162 nC 56 nC 70 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.26 RthJC 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. trr QRM K/W IF = 25 A,-di/dt = 100 A/µs, VR = 100 V 44 A 164 A 1.5 V 250 ns 1.0 µC 8 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1