HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class = 150 V = 80 A = 22.5 mW £ 200 ns RDS(on) t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 80 320 80 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G TO-264 AA (IXFK) G D TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. TO-247 TO-264 TO-268 6 10 4 g g g G = Gate S = Source l Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 uA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved 150 2.0 TJ = 25°C TJ = 125°C V 4.0 V ±100 nA 25 1 mA mA 22.5 m W D (TAB) S TAB = Drain Features l Symbol (TAB) S l l l l l Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier Advantages l l l Easy to mount Space savings High power density 98725 (05/31/00) IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 35 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 50 S 4500 pF 1400 pF 680 pF 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 ns td(off) RG = 2.0 W (External), 68 ns 20 ns 180 nC 39 nC 85 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.35 TO-247 TO-264 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 0.15 K/W K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 A Repetitive; pulse width limited by TJM 320 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 200 ns mC A IF = IS -di/dt = 100 A/ms, VR = 100 V 1.2 10 TO-268 Outline Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ÆP Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025