SEMICONDUCTOR KDR367E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES 1 A Small Package : ESC. E C B CATHODE MARK Low Forward Voltage : VF(2)=0.23V (Typ.) 2 MAXIMUM RATING (Ta=25 ) D F CHARACTERISTIC SYMBOL RATING UNIT VRM 15 V Reverse Voltage VR 10 V Maximum (Peak) Forward Current IFM 200 mA Average Forward Current IO 100 mA IFSM 1 A Power Dissipation PD 150* mW Junction Temperature Tj 125 Tstg -55 125 Maximum (Peak) Reverse Voltage Surge Current (10ms) Storage Temperature Range DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Marking Type Name US ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.18 - VF(2) IF=5mA - 0.23 0.30 VF(3) IF=100mA - 0.35 0.50 UNIT V Reverse Current IR VR=10V - - 20 A Total Capacitance CT VR=0V, f=1MHz - 20 40 pF 2003. 2. 25 Revision No : 1 1/2 KDR367E I F - VF I R - VR 1m REVERSE CURRENT I R (A) Ta=100 C 10m Ta = Ta 100 Ta =75 C = Ta 50 C C =2 5 C Ta =0 Ta C = -2 5 C FORWARD CURRENT I F (A) 100m 1m 100µ 10µ 0.1 0.2 0.3 0.4 Ta=25 C 1µ Ta=0 C Ta=-25 C 100n 0.5 0 4 6 8 10 REVERSE VOLTAGE VR (V) C T - VR P - Ta 240 POWER DISSIPATION P (mW) f=1MHz Ta=25 C 30 20 10 0 10m 2 FORWARD VOLTAGE VF (V) 40 CAPACITANCE CT (pF) Ta=50 C 10µ 10n 0 Mounted on a glass epoxy circuit board of 20`20mm, pad dimension 4`4mm. 200 160 120 80 40 0 30m 0.1 0.3 1 3 REVERSE VOLTAGE VR (R) 2003. 2. 25 Ta=75 C 100µ Revision No : 1 10 20 50 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2/2