SEMICONDUCTOR KDR720S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE For high speed switching circuit. For small current rectification. FEATURES E B L L Low Forward Voltage : VF=0.55V(Max). H MAXIMUM RATING (Ta=25 3 G A 2 1 ) VRRM 30 V Reverse Voltage VR 30 V Average Forward Current IO 0.2 A IFSM 1 A Junction Temperature Tj 125 Storage Temperature Tstg -55 125 Repetitive Peak Reverse Voltage Non-repetitive peak surge current P J UNIT MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K RATING N SYMBOL C P CHARACTERISTIC D IO=200mA recification possible. DIM A B C D E G H J K L M N P 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 SOT-23 Marking Lot No. MG Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=0.2A - - 0.55 V Reverse Current IR VR=30V - - 50 A Total Capacitance CT VR=0V, f=1MHz - 30 - pF Reverse Recovery Time trr IR=IF=10mA - 3 - nS 2003. 2. 25 Revision No : 1 1/2 KDR720S IF IR - 3 C 0 10 = Ta Ta =25 1 REVERSE CURRENT I R (µA) =1 Ta 10 C 50 C C 10 2 10 -1 10 -2 0 0.1 0.2 0.3 0.4 10 4 Ta=150 C 10 3 Ta=100 C 2 10 10 Ta=25 C 1 10 0.5 -1 0 5 FORWARD VOLTAGE VF (V) 10 IR - 0.5 20 25 30 160 200 Ta 10 4 REVERSE CURRENT I R (µA) FORWARD VOLTAGE VF (V) 15 REVERSE VOLTAGE V R (V) V F - Ta I F =200mA 0.4 I F =100mA 0.3 I F =1mA 0.2 0.1 0 VR 5 10 Ta =2 5 FORWARD CURRENT I F (mA) 10 - VF -40 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) 10 3 10 2 VR =30V VR =10V VR =5V 10 1 -40 0 40 80 120 AMBIENT TEMPERAURE Ta ( C) C T - VR TOTAL CAPACITANCE CT (pF) 32 Ta=25 C f=1MHz 28 24 20 16 12 8 4 0 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2003. 2. 25 Revision No : 1 2/2