SEMICONDUCTOR KDR552F TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE FOR HIGH SPEED SWITCHING. CATHODE MARK FEATURES Low reverse current, Low capacitance. C D Small Package : TFSC. DIM A B C D E F B A MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING UNIT VRRM 25 V Reverse Voltage VR 25 V Average Forward Current IO 50 mA IFSM 200 mA Tj 125 Tstg -55 125 Repetitive Peak Reverse Voltage E SYMBOL MILLIMETERS _ 0.05 1.00 + 0.80+0.10/-0.05 _ 0.05 0.60 + _ 0.05 0.30 + 0.40 MAX _ 0.05 0.13 + F Non-repetitive Peak Surge Current (10mS) Junction Temperature Storage Temperature Range 1. ANODE 2. CATHODE TFSC Marking 7 Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL VF Forward Voltage TEST CONDITION MIN. TYP. MAX. IF=1mA - - 0.33 IF=5mA - - 0.38 UNIT V Reverse Current IR VR=20V - - 0.45 A Total Capacitance CT VR=1V, f=1MHz - - 2.80 pF 2005. 5. 27 Revision No : 0 1/2 KDR552F IF - V F IR - V R 10 1 Reverse Current IR (A) Forward Current IF (A) 10 10-4 Pulse test 0 10-1 10-2 Ta = 75 C 10-3 10-4 Ta = 25 C 10-5 10-6 10-5 Ta = 75 C 10-6 Ta = 25 C 10-7 10-7 10-8 10-8 0 0.2 0.4 0.6 0.8 10 Forward Voltage VF (V) 0 10 20 30 40 Reverse Current VR (V) CT - V R Total Capacttance CT (pF) f=1MHz 10 1.0 0.1 0.1 1.0 10 Reverse Current VR (V) 2005. 5. 27 Revision No : 0 2/2