FAIRCHILD KSC3953

KSC3953
KSC3953
CRT Display Video Output
• High Current Gain Bandwidth Product : fT=400MHz(Typ.)
• High Collector-Emitter Voltage : VCEO=120V
• Low Reverse Transfer Capacitance : Cre=1.7pF(Typ.)
TO-126
1
1. Emitter
2.Collector
3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
120
Units
V
120
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current (DC)
200
mA
ICP
Collector Current (Pulse)
400
mA
PC
Collector Dissipation (Ta=25°C)
1.3
W
PC
Collector Dissipation (TC=25°C)
8
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 10µA, IB = 0
Min.
120
BVEBO
Collector-Emitter Breakdown Voltage
IC = 1mA, RBE = ∞
120
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
3
ICBO
Collector Cut-off Current
VCB = 80V, IE = 0
IEBO
Emitter Cut-off Current
VEB = 2V, IC = 0
hFE1
hFE2
DC Current Gain
VCE = 10V, IC = 10mA
VCE = 10V, IC = 100mA
Typ.
Max.
Units
V
V
V
40
20
0.1
µA
1.0
µA
120
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 30mA, IB = 3mA
1.0
VBE(sat)
Base-Emitter Saturation Voltage
IC = 30mA, IB = 3mA
1.0
fT
Current Gain Bandwidth Product
VCE = 10V,IC = 50mA
Cob
Output Capacitance
VCB = 30V, f = 1MHz
2.1
pF
Cre
Reverse Transfer Capacitance
VCB = 30V, f = 1MHz
1.7
pF
400
V
V
MHz
hFE Classificntion
Classification
C
D
hFE1
40 ~ 80
60 ~ 120
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3953
Typical Characteristics
1000
100
IB = 0.9mA
VCE = 10V
IB = 0.7mA
80
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB = 0.8mA
IB = 0.6mA
60
IB = 0.5mA
IB = 0.4mA
40
IB = 0.3mA
IB = 0.2mA
20
100
10
IB = 0.1mA
IB = 0
0
0
4
8
12
16
1
1
20
10
V CE[V], COLLECTOR-EMITTER VOLTAGE
1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
120
10
VCE = 10V
IC = 10 IB
100
IC[mA], COLLECTOR CURRENT
VCE(sat)[V], SATURATION VOLTAGE
100
1
0.1
80
60
40
20
0
0.0
0.01
1
10
100
1000
IC[mA], COLLECTOR CURRENT
0.2
0.4
0.6
0.8
1.0
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
100
f = 1MHz
f = 1MHz
IE = 0
IE = 0
Cre[pF], CAPACITANCE
Cob[pF], CAPACITANCE
1.2
VBE[V], BASE-EMITTER VOLTAGE
10
1
0.1
0.1
1
10
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2000 Fairchild Semiconductor International
100
10
1
0.1
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 6. Reverse Capacitance
Rev. A, February 2000
KSC3953
1000
1000
V CE = 10V
10
1
10
100
IC[mA], COLLECTOR CURRENT
s
o
TC = 25 C
100
10
VCEO MAX.
100
IC MAX. (DC)
1m
IC[mA], COLLECTOR CURRENT
IC MAX. (Pulse)
ms
10
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
Typical Characteristics (Continued)
1
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
PC[W], POWER DISSIPATION
10
8
6
Tc
4
2
Ta
0
0
25
50
75
100
125
150
175
o
T[ C], TEMPERATURE
Figure 9. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3953
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E