KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-Emitter Volage Value 150 : KSD985 : KSD986 Units V 60 80 V V V VEBO Emitter-Base Voltage 8.0 IC Collector Current (DC) 1.5 A ICP *Collector Current (Pulse) 3.0 A IB Base Current PC Collector Dissipation (Ta=25°C) 0.15 A 1.0 W PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤300µs, Duty Cycle10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 60V, IE = 0 ICER Collector Cut-off Current ICEX1 ICEX2 Min. Typ. Max. 10 Units µA VCE = 60V, RBE = 51Ω @ TC = 125°C 1.0 mA Collector Cut-off Current VCE = 60V, VBE(off) = -1.5A VCE = 60V, VBE(off) = -1.5A @ TC = 125°C 10 1.0 µA mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1.0 mA hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 1mA 1.5 VBE(sat) *Base-Emitter Saturation Voltage IC = 1A, IB = 1mA 2.0 tON Turn ON Time tSTG Storage Time tF Fall Time VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 1000 2000 30000 V V µs 0.5 1.0 µs 1.0 µs * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classification Classification R O Y hFE2 2000 ~ 5000 4000 ~ 10000 8000 ~ 30000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD985/986 Typical Characteristics 10000 IB = 220uAIB = 200uA I = 160uA IB = 180uA B VCE = 2V IB = 140uA 1.6 IB = 120uA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.0 IB = 100uA 1.2 0.8 IB = 80uA 0.4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1000 100 0.01 5.0 0.1 Figure 1. Static Characteristic 10 Figure 2. DC current Gain 160 10 IC = 1000 IB 140 dT(%), IC DERATING VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat) 1 120 100 S/b 80 Di ss 60 40 V CE(sat) ip at ion 20 L im Li m ite d ite d 0 0.1 0.1 1 0 10 25 50 75 100 125 150 175 200 o IC[A], COLLECTOR CURRENT TC[ C], CASE TEMPERATURE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Derating Curve Of Safe Operating Areas 10 2.50 1.00 0.1 d it e 0.50 te d m Li 0.75 si p a t io nL i mi 30 0 1m us s b S/ IC[A], COLLECTOR CURRENT 1.25 1 3m s DC s 1.50 D is us 1.75 u 30 2.00 0 10 IC[A], COLECTOR CURRENT 2.25 0.25 0.01 0.00 0 10 20 30 40 50 60 70 80 90 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Areas ©2000 Fairchild Semiconductor International 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSD985/986 Typical Characteristics (Continued) 16 PC[W], POWER DISSIPATION 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD985/986 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E