FAIRCHILD KSD985

KSD985/986
KSD985/986
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
TO-126
1
1. Emitter
2.Collector
3.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
VCEO
Collector-Emitter Volage
Value
150
: KSD985
: KSD986
Units
V
60
80
V
V
V
VEBO
Emitter-Base Voltage
8.0
IC
Collector Current (DC)
1.5
A
ICP
*Collector Current (Pulse)
3.0
A
IB
Base Current
PC
Collector Dissipation (Ta=25°C)
0.15
A
1.0
W
PC
Collector Dissipation (TC=25°C)
10
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤300µs, Duty Cycle10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB = 60V, IE = 0
ICER
Collector Cut-off Current
ICEX1
ICEX2
Min.
Typ.
Max.
10
Units
µA
VCE = 60V, RBE = 51Ω
@ TC = 125°C
1.0
mA
Collector Cut-off Current
VCE = 60V, VBE(off) = -1.5A
VCE = 60V, VBE(off) = -1.5A
@ TC = 125°C
10
1.0
µA
mA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1.0
mA
hFE1
hFE2
*DC Current Gain
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 1A, IB = 1mA
1.5
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 1A, IB = 1mA
2.0
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
VCC = 50V, IC = 1A
IB1 = - IB2 = 1mA
RL = 50Ω
1000
2000
30000
V
V
µs
0.5
1.0
µs
1.0
µs
* Pulse Test: PW≤350µs, Duty Cycle≤2%
hFE Classification
Classification
R
O
Y
hFE2
2000 ~ 5000
4000 ~ 10000
8000 ~ 30000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD985/986
Typical Characteristics
10000
IB = 220uAIB = 200uA
I = 160uA
IB = 180uA B
VCE = 2V
IB = 140uA
1.6
IB = 120uA
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
2.0
IB = 100uA
1.2
0.8
IB = 80uA
0.4
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1000
100
0.01
5.0
0.1
Figure 1. Static Characteristic
10
Figure 2. DC current Gain
160
10
IC = 1000 IB
140
dT(%), IC DERATING
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
1
120
100
S/b
80
Di
ss
60
40
V CE(sat)
ip
at
ion
20
L im
Li
m
ite
d
ite
d
0
0.1
0.1
1
0
10
25
50
75
100
125
150
175
200
o
IC[A], COLLECTOR CURRENT
TC[ C], CASE TEMPERATURE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Derating Curve Of Safe Operating Areas
10
2.50
1.00
0.1
d
it e
0.50
te d
m
Li
0.75
si p
a t io
nL
i mi
30
0
1m us
s
b
S/
IC[A], COLLECTOR CURRENT
1.25
1
3m
s
DC
s
1.50
D is
us
1.75
u
30
2.00
0
10
IC[A], COLECTOR CURRENT
2.25
0.25
0.01
0.00
0
10
20
30
40
50
60
70
80
90
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Areas
©2000 Fairchild Semiconductor International
1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A, February 2000
KSD985/986
Typical Characteristics (Continued)
16
PC[W], POWER DISSIPATION
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD985/986
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E