SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E B L L High emitter-base voltage : VEBO=25V(Min) 2 A H With Built-in Bias Resistors. 3 G Low on resistance : Ron=1 (Typ.) (IB=5mA) D High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) 1 Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C J 1. EMITTER R1 B MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C EQUIVALENT CIRCUIT P N P DIM A B C D E G H J K L M N P 2. BASE 3. COLLECTOR E MAXIMUM RATING (Ta=25 SOT-23 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 25 V Collector Current IC 300 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range MARK SPEC TYPE hFE classification B KRC281S MQB KRC282S MRB KRC283S MSB KRC284S MTB KRC285S MUB KRC286S MVB 2002. 12. 5 Revision No : 1 Marking Lot No. Type Name 1/2 KRC281S~KRC286S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage BVCEO IC=1mA 20 - - V Collector-Base Breakdown Voltage BVCBO IC=50 A 50 - - V Emitter-Base Breakdown Voltage BVEBO IE=50 A 25 - - V VCB=50V, IE=0 - - 0.1 A VCE(sat) IC=30mA, IB=3mA - - 0.1 V hFE VCE=2V, IC=4mA 350 - 1200 KRC281S - 2.2 - KRC282S - 4.7 - - 5.6 - - 6.8 - KRC285S - 10 - KRC286S - 22 - ICBO Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC283S Input Resistor KRC284S R1 k Transition Frequency fT * VCE=6V, IC=4mA, - 30 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 - pF * Characteristic of Transistor Only. Note) hFE Classification 2002. 12. 5 B:350 1200 Revision No : 1 2/2