SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. 1 ・Reduce a Quantity of Parts and Manufacturing Process. J C B MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C EQUIVALENT CIRCUIT P N P DIM A B C D E G H J K L M N P 1. EMITTER R1 2. BASE 3. COLLECTOR E SOT-23 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Collector Current IC 600 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range MARK SPEC TYPE KRC231S KRC232S KRC233S KRC234S KRC235S MARK NW NY NZ NNA NNB Marking Type Name Lot No. Lot No. Type Name 2002. 5. 14 Revision No : 3 1/3 KRC231S~KRC235S ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCEO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage MIN. TYP. MAX. UNIT IC=1mA 15 - - V BVCBO IC=50μA 30 - - V BVEBO IE=50μ A 5.0 - - V ICBO VCB=30V - - 0.5 μA IC=50mA, IB=2.5mA - 40 80 mV 200 350 800 - KRC231S - 2.2 - KRC232S - 5.6 - - 10 - KRC234S - 4.7 - KRC235S - 6.8 - - 200 - MHz - 0.6 - Ω Collector Cut-off Current Collector-Emitter Saturation Voltage hFE DC Current Gain Input Resistor VCE(sat) KRC233S TEST CONDITION VCE=5V, IC=50mA R1 Transition Frequency fT* On Resistance Ron VCE=10V, IE=-50mA, f=100MHz f=1kHz, IB=1mA, VIN=0.3V kΩ Note : * Characteristic of Transistor Only. 2002. 5. 14 Revision No : 3 2/3 KRC231S~KRC235S h FE - I C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 2k DC CURRENT GAIN h FE 1k 300 100 30 10 COMMON EMITTER VCE =5V Ta=25 C 3 1 0.1 0.3 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 500 300 COMMON EMITTER VCE =5V Ta=25 C 100 50 30 I C /I B =20 I C /I B =10 10 5 3 1 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) R on - I B ON RESISTANCE R on (Ω) 1k I B=1mA 300 100 ~ 30 Vh v Vh 10 f=1kHz VIN =0.3V 3 1 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 30 100 BASE CURRENT I B (mA) 2002. 5. 14 Revision No : 3 3/3