SEMICONDUCTOR KRA560E~KRA564E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process. 1 2 DIM A 5 A1 Simplify Circuit Design. C With Built-in Bias Resistors. A1 B D High Packing Density. 3 EQUIVALENT CIRCUIT (TOP VIEW) C R1 5 4 Q1 Q2 B1 C D 0.50 _ 0.05 0.2 + _ 0.05 0.5 + H P _ 0.05 0.12 + 5 J P P J H EQUIVALENT CIRCUIT B 4 MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+ E 1 2 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR) 3 TESV MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector Power Dissipation Collector-Emitter Voltage VCEO -50 V Junction Temperature Emitter-Base Voltage VEBO -5 V Storage TemperatureRange IC -100 mA Collector Current ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC CHARACTERISTIC SYMBOL RATING UNIT PC * 200 mW Tj 150 Tstg -55 150 * Total Rating. ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA DC Current Gain hFE VCE=-5V, IC=-1mA 120 - - IC=-10mA, IB=-0.5mA - -0.1 -0.3 V VCE=-10V, IC=-5mA - 250 - MHz - 4.7 - - 10 - - 100 - KRA563E - 22 - KRA564E - 47 - VCE(sat) Collector-Emitter Saturation Voltage fT * Transition Frequency KRA560E KRA561E R1 KRA562E Input Resistor Note : * Characteristic of Transistor Only. Marking TYPE KRA560E KRA561E KRA562E KRA563E KRA564E MARK PK PM PN PO PP 1 2002. 7. 9 Type Name 5 MARK SPEC Revision No : 2 k 4 2 3 1/4 KRA560E~KRA564E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Rise Time SYMBOL MIN. TYP. MAX. KRA560E - 0.2 - KRA561E - 0.065 - - 0.4 - KRA563E - 0.1 - KRA564E - 0.15 - KRA560E - 2.0 - VO=-5V - 1.7 - VIN=-5V - 3.0 - RL=1k - 2.0 - KRA564E - 1.5 - KRA560E - 0.3 - KRA561E - 0.3 - - 1.7 - KRA563E - 0.8 - KRA564E - 1.5 - KRA562E tr KRA561E Switching Storage Time Time KRA562E tstg KRA563E Fall Time 2002. 7. 9 KRA562E Revision No : 2 TEST CONDITION tf UNIT S 2/4 KRA560E~KRA564E COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 2k h FE - I C KRA560E 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -2 KRA560E I C /IB =20 -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -2 KRA561E 1k Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 2 -10 -30 -100 VCE(sat) - I C -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 h FE - I C 500 300 -3 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 2k -1 I C /I B =20 -1 COLLECTOR CURRENT I C (mA) KRA562E -0.3 COLLECTOR CURRENT I C (mA) h FE - I C KRA561E VCE(sat) - I C -100 -2 KRA562E -1 VCE(sat) - I C IC /I B =20 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 3/4 KRA560E~KRA564E COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k h FE - I C KRA563E 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -2 KRA563E I C /I B =20 -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 10 -0.1 VCE =-5V -0.3 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 2 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) h FE - I C KRA564E VCE(sat) - I C -100 -2 -1 KRA564E VCE(sat) - I C I C /I B =20 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 4/4