FAIRCHILD KSD5701

KSD5701
KSD5701
High Voltage Color Display Horizontal
Deflection Output
(Damper Diode Built In)
• High Collector-Base Voltage : VCBO=1500V
• High Switching Speed : tF = 0.4µs (Max.)
• For Color TV
Equivalent Circuit
C
B
TO-3PF
1
50Ω typ.
1.Base
2.Collector
3.Emitter
E
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
1500
Units
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current (DC)
3.5
A
ICP
Collector Current (Pulse)
10
A
PC
Collector Dissipation (TC=25°C)
50
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB = 800V, IE = 0
Min.
Typ.
Max.
10
Units
µA
mA
IEBO
Emitter Cut-off Current
VEB = 4V, IC = 0
40
250
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 2.5A
10
2.5
30
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2.5A, IB = 0.8A
5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2.5A, IB = 0.8A
1.5
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
VF
Damper Diode Turn On Voltage
IF = 3.5A
tF
Fall Time
VCC = 200V, IC = 3A
IB1 = 0.8A, IB2 = - 1.6A
RL = 66.7Ω
©2000 Fairchild Semiconductor International
3
MHz
2
V
0.4
µs
Rev. A, February 2000
KSD5701
Typical Characteristics
100
8
VCE = 5V
6
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
7
IB = 2.0A
IB = 1.8A
IB = 1.6A
IB = 1.4A
IB = 1.2A
IB = 1.0A
IB = 0.8A
IB = 0.6A
IB = 0.4A
5
4
3
IB = 0.2A
2
10
1
0
0
1
2
3
4
5
6
7
8
9
1
0.1
10
1
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
8
VCE = 5V
7
IC = 5 IB
IC[A], COLLECTOR CURRENT
VCE(sat)[V], SATURATION VOLTAGE
100
10
1
IC = 3 IB
0.1
0.01
0.1
1
6
5
4
3
2
1
0
0.0
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
1.0
tSTG[µ S], STORAGE TIME
tF[µS], COLLECTOR CURRENT FALL TIME
10
0.8
0.6
IC = 2.5A
0.4
8
6
IC = 1.5A
IC = 2.5A
4
IC = 2.0A
2
IC = 2.0A
IC = 1.5A
0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
dIB/dt[A/µS], BASE CURRETN GRADIENT
Figure 5. Switching Characteristic 1
©2000 Fairchild Semiconductor International
1.4
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
dIB/dt[A/µ S], BASE CURRETN GRADIENT
Figure 6. Switching Characteristic 2
Rev. A, February 2000
KSD5701
Typical Characteristics (Continued)
100
100
SINGLE PULSE
IC=5IB1=-5IB2
O
L=500uH
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
TC=25 C
IC max(Pulse)
10
100µ s
IC max(DC)
300µ s
1ms
DC
1
10ms
0.1
0.01
SINGLE PULSE
IC MAX.(Pulse)
10
IB2=-0.5A Const
@ IC>2.5A
1
0.1
1
10
100
1000
2000
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Safe Operating Area
Figure 8. Reverse Bias Safe Operating Area
80
PC[W], POWER DISSIPATION
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 9. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD5701
Package Demensions
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
2.00 ±0.20
°
22.00 ±0.20
23.00 ±0.20
10
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
0.85 ±0.03
2.00 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
10.00 ±0.20
(1.50)
2.00 ±0.20
2.00 ±0.20
14.80 ±0.20
3.00 ±0.20
ø3.60 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E