KSC5802 KSC5802 High Voltage Color Display Horizontal Deflection Output (No Damper Diode) • • • • High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs (Typ.) Wide S.O.A For C-Monitor(69KHz) TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC Value Units 1500 V 800 V Emitter-Base Voltage 6 V Collector Current (DC) 10 A ICP Collector Current (Pulse) 30 A 60 PC Collector Dissipation (TC=25°C) TJ Junction Temperature 150 W °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Max. Units ICES Symbol Collector Cut-off Current Parameter VCE = 1400V, VBE=0 1 mA ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 uA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 1 mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 1A VCE = 5V, IC = 6A VCE(sat) Collector-Emitter Saturation Voltage IC = 6A, IB = 1.5A 3 V VBE(sat) Base-Emitter Saturation Voltage IC = 6A, IB = 1.5A 1.5 tF Fall Time VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω V µs ©2000 Fairchild Semiconductor International Test Condition Min. Typ. 15 7 48 10 0.1 0.3 Rev. B. February 2000 KSC5802 Typical Characteristics STATIC CHARACTERISTIC BASE EMITTER ON VOLTAGE 10 10 9 Vce=5V IB=2A IB=1.8A 8 IB=1.6A IB=1.4A Ic [A], COLLECTOR CURRENT IB=1.2A 7 Ic[A], COLLECTOR CURRENT 8 IB=1.0A 6 IB=0.8A IB=0.6A 5 IB=0.4A 4 IB=0.2A 3 2 6 4 2 1 0 0 1 2 3 4 5 6 7 8 9 0 10 0.0 0.2 0.4 VCE[V], COLLECTOR EMITTER VOLTAGE 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Vbe [V], BASE EMITTER VOLTAGE DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE 1 100 4 10 Vce=5V Ic=3Ib Vce(sat) [mV], SATURATION VOLTAGE 125 75 hFE, DC CURRENT GAIN 25 -25 10 125 75 25 -25 3 10 2 10 1 1 0.1 1 Ic [A], COLLECTOR CURRENT 10 10 0.1 1 Ic [A], COLLECTOR CURRENT 10 COLLECTOR-EMITTER SATURATION VOLTAGE 2 BASE-EMITTER SATURATION VOLTAGE 1 4 10 2 Ic=5Ib Vce(sat) [mV], SATURATION VOLTAGE Vbe(sat) [mV], SATURATION VOLTAGE Ic=3Ib 1 0.9 0.8 -25 0.7 25 0.6 75 125 125 75 25 -25 3 10 2 10 0.5 0.4 0.1 1 10 1 Ic [A], COLLECTOR CURRENT ©2000 Fairchild Semiconductor International 10 0.1 1 10 Ic [A], COLLECTOR CURRENT Rev. B. February 2000 KSC5802 Typical Characteristics (continued) BASE-EMITTER SATURATION VOLTAGE 2 SAFE OPERATING AREA 100 2 IC(A), COLLECTOR CURRENT 0.7 25 0.6 75 S 0u 10 S 0u 30 -25 0.8 mS 10 1 0.9 Ic MAX. 10 S 1m Vbe(sat) [mV], SATURATIONVOLTAGE Ic=5Ib 1 DC 0.1 125 0.5 SINGLE PULSE Tc=25oC 0.01 0.4 0.1 1 Ic [A], COLLECTOR CURRET 1 10 10 100 1000 10000 VCE(V), COLLECTOR-EMITTER VOLTAGE POWER DERATING REVERSE BIAS SAFE OPERATING AREA 100 80 10 PD(W), POWER DISSIPATION IC(A), COLLECTOR CURRENT 70 IB2= -1A CONST (at IC>5A) 1 IC=5IB1=-5IB2 L=500uH SINGLE PULSE 60 50 40 30 20 10 0.1 10 100 1000 10000 0 0 VCE(V), COLLECTOR-EMITTER VOLTAGE ©2000 Fairchild Semiconductor International 25 50 75 100 125 150 175 200 Tc(C), CASE TEMPERATURE Rev. B. February 2000 KSC5802 Package Dimension TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 14.50 ±0.20 0.85 ±0.03 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 ©2000 Fairchild Semiconductor International 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Rev. B. February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. B. February 2000