AP2302N Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Small package outline D ▼ Surface mount package BVDSS 20V RDS(ON) 85mΩ ID 3.2A S SOT-23 Description G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V ±12 V 3 3.2 A 3 2.6 A 10 A Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1,2 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 90 ℃/W 200503044 AP2302N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=3.6A - - 85 mΩ VGS=2.5V, ID=3.1A - - 115 mΩ VDS=VGS, ID=250uA 0.5 - 1.2 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VGS=0V, ID=250uA VDS=5V, ID=3.6A - 6 - S o VDS=20V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=±12V - - ±100 nA ID=3.6A - 4.4 - nC Drain-Source Leakage Current (Tj=25 C) IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=10V - 0.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.9 - nC VDS=10V - 5.2 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=3.6A - 37 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=5V - 15 - ns tf Fall Time RD=2.8Ω - 5.7 - ns Ciss Input Capacitance VGS=0V - 145 - pF Coss Output Capacitance VDS=10V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. - - 1 A - - 10 A - - 1.2 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage IS=1.6A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. Max. Units AP2302N 7 10 o 4.5V 3.5V 3.0V 2.5V ID , Drain Current (A) 8 o T A =150 C 6 ID , Drain Current (A) T A =25 C 6 4 V G =2.0V 4.5V 3.5V 3.0V 2.5V 5 4 V G =2.0V 3 2 2 1 0 0 0.0 0.5 1.0 1.5 2.0 0.0 2.5 0.5 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 100 I D =3.6A I D = 3.1 A 1.6 o V G =4.5V T A =25 C Normalized R DS(ON) RDS(ON) (mΩ ) 90 80 1.4 1.2 1.0 70 0.8 0.6 60 2 3 4 -50 5 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance 1.4 10.0 VGS(th) (V) IF (A) 1.0 1.0 T j =150 o C T j =25 o C 0.6 0.2 0.1 0.1 0.5 0.9 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP2302N VGS , Gate to Source Voltage (V) 12 f=1.0MHz 1000 I D =3.6A V DS =4.5V 10 C (pF) 8 6 C iss 100 C oss 4 C rss 2 10 0 0 2 4 6 8 1 10 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 ID (A) 9 V DS , Drain-to-Source Voltage (V) 1ms 1 10ms 0.1 100ms T A =25 o C Single Pulse 1s Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃ /W DC 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q