AP9926EM-A
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
D2
D2
▼ Capable of 2.5V gate drive
D1
D1
▼ Surface mount package
BVDSS
16V
RDS(ON)
27mΩ
ID
7A
G2
S2
SO-8
S1
G1
Description
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
16
V
±12
V
3
7
A
3
5.6
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
201112041
AP9926EM-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
16
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.01
-
V/℃
Static Drain-Source On-Resistance2
VGS=4.5V, ID=6A
-
-
27
mΩ
VGS=2.5V, ID=5A
-
-
40
mΩ
VDS=VGS, ID=250uA
-
-
1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=5V, ID=6A
-
13
-
S
o
VDS=16V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=12V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±10
uA
ID=6A
-
14
22
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Min. Typ. Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=10V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
26
-
ns
tf
Fall Time
RD=10Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
670
pF
Coss
Output Capacitance
VDS=16V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3
-
Ω
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=1.7A, VGS=0V
Min. Typ. Max. Units
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 ℃/W when mounted on Min. copper pad.
AP9926EM-A
50
50
5.0V
4.5V
3.5V
T A =25 C
ID , Drain Current (A)
40
5.0V
4.5V
T A = 150 o C
40
ID , Drain Current (A)
o
30
2.5V
20
10
3.5V
30
2.5V
20
10
V G =1.5V
V G =1.5V
0
0
0
1
2
3
4
0
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
50
ID=5A
I D =6A
V G = 4.5V
1.4
o
Normalized R DS(ON)
T A =25 C
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
40
30
1.2
1.0
0.8
0.6
20
1
2
3
4
-50
5
0
50
100
150
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Temperature
1.6
Normalized VGS(th) (V)
6
4
IS(A)
T j =150 o C
T j =25 o C
2
0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9926EM-A
ID=6A
12
V DS = 6 V
V DS = 8 V
V DS =1 0 V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
16
C oss
4
C rss
100
0
0
5
10
15
20
25
30
1
35
4
7
10
13
16
19
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
Normalized Thermal Response (Rthja)
1
1ms
10ms
1
ID (A)
100ms
1s
10s
DC
o
0.1
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01
0.001
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
ID , Drain Current (A)
V DS =5V
15
QG
o
o
T j =25 C
4.5V
T j =150 C
QGS
10
QGD
5
Charge
0
0
1
2
3
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q