2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V • PG = 6.4 dB at 80 W/175 MHz • Omnigold™ Metalization System • Common Emitter configuration B 4 E .725/18,42 F G M K H MAXIMUM RATINGS J I L M AXIM UM DIM M INIM UM inches / m m inches / m m A .150 / 3.43 .160 / 4.06 .045 / 1.14 B C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 IC 20 A VCBO 36 V VCEO 16 V H 4.0 V J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 220 W @ TC = 25 °C L .150 / 3.81 .170 / 4.32 .120 / 3.05 .135 / 3.43 VEBO PDISS -65 °C to +175 ° C TSTG -65 °C to +175 °C θJC 0.68 °C/W SYMBOL .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 I TJ CHARACTERISTICS E .285 / 7.24 M N 1 = Collecttor 2 = Base 3&4 = Emitter TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCBO IC = 20 mA 36 V BVEBO IE = 1.0 mA 4.0 V hFE VCE = 5.0 V COB VCB = 12.5 V PG POUT = 80 W ηC VCC = 12.5 V PIN = 18 W ZIN VCC = 12.5 V POUT = 80 W ZCL VCC = 12.5 V POUT = 80 W IC = 10 A 10 f = 1.0 MHz f = 175 MHz 100 --- 390 pF 6.4 6.8 dB 60 70 % f = 175 MHz --- 1.0 + j1.5 --- Ω f = 175 MHz --- 1.2 + j1.8 --- Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1