2SC3133 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION: The ASI 2SC3133 is Designed for RF Power amplifiers in HF band mobile radio Applications. MAXIMUM RATINGS IC 6.0 A VCE 25 V VCB 60 V PDISS 20 W @ TC = 25 °C TSTG -65 °C to +150 °C θJC 6.25 °C/W CHARACTERISTICS 1 = BASE 3 = COLLECTOR 2 = EMITTER TAB = EMITTER TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 25 V BVCBO IC = 5.0 mA 60 V BVEBO IE = 1.0 mA 5.0 V ICBO VCB = 30 V 500 µA IEBO VEB = 4.0 V 500 µA hFE VCE = 12 V IC = 10 mA 180 --- PO ηC VCC = 12 V PIN = 0.5 W f = 27 MHz 10 50 13 60 16 70 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. A 1/1