TPV596 SILICON N-CHANNEL RF POWER MOSFET DESCRIPTION: PACKAGE STYLE 280 4L STUD The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. FEATURES: • PG = 12 dB min. at 0.5 W/ 860 MHz • Common Emitter • Omnigold™ Metallization System MAXIMUM RATINGS IC 0.7 A VCE 24 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C PDISS 8.75 W @ TC = 25 C 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 24 V BVCBO IC = 1.0 mA 45 V BVCER IC = 20 mA 50 V BVEBO IE = 0.25 mA 3.5 V ICBO VCB = 28 V hFE IC = 100 mA COB VCB = 28 V PG VCE = 20 V RBE = 10 Ω VCE = 5.0 V 15 f = 1.0 MHz IE = 0.22 A f = 860 MHz 11.5 12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.45 mA 120 --- 5.0 pF dB REV. A 1/1