ASI TPV596

TPV596
SILICON N-CHANNEL RF POWER MOSFET
DESCRIPTION:
PACKAGE STYLE 280 4L STUD
The TPV596 is Designed for Common
Source Push Pull RF Power
Applications up to 400 MHz.
FEATURES:
• PG = 12 dB min. at 0.5 W/ 860 MHz
• Common Emitter
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC
0.7 A
VCE
24 V
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
PDISS
8.75 W @ TC = 25 C
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
O
NONE
CHARACTERISTICS
SYMBOL
O
TC = 25 C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCEO
IC = 20 mA
24
V
BVCBO
IC = 1.0 mA
45
V
BVCER
IC = 20 mA
50
V
BVEBO
IE = 0.25 mA
3.5
V
ICBO
VCB = 28 V
hFE
IC = 100 mA
COB
VCB = 28 V
PG
VCE = 20 V
RBE = 10 Ω
VCE = 5.0 V
15
f = 1.0 MHz
IE = 0.22 A
f = 860 MHz
11.5
12
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
0.45
mA
120
---
5.0
pF
dB
REV. A
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