2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG FEATURES: • POSC = 630 mW Typical at 7.5 GHz • Omnigold™ Metallization System MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7 W @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C θJC 18 °C/W CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 1.0 mA 16 V BVCBO IC = 100 µA 25 V BVEBO IE = 100 µA 1.5 V ICBO VCB = 15 V 1.0 µA IEBO VEB = 1.0 V 4.0 µA hFE VCE = 8.0 V 200 --- COB VCB = 10 V 4.0 pF IC = 200 mA 20 f = 1.0 MHz S21 VCC = 8.0 V IC = 200 mA f = 1.0 GHz POSC VCE = 12 V IC = 200 mA f = 7.5 GHz 2 2.9 dB 3.5 630 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. mW REV. B 1/1