AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching MAXIMUM RATINGS IC 16.5 A VCC 35 V PDISS 300 W @ TC = ≤ 100 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 0.57 °C/W CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 60 mA 55 V BVCES IC = 100 mA 55 V BVEBO IE = 10 mA 3.5 V ICES VCB = 35 V hFE VCE = 5.0 V POUT PG ηC VCC = 35 V 25 IC = 5.0 A f = 960 to 1215 MHz --- 20 PIN = 26.7 W 300 7.0 38 330 7.4 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA W dB % REV. A 1/1