ASI AM0912-150

AM0912-150
RF POWER TRANSISTOR
PACKAGE - .400 X .500 2L FLG
DESCRIPTION:
The ASI AM0912-150 is a Common
Base Transistor Designed for TCAS
and JTIDS Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
IC
16.5 A
VCC
35 V
PDISS
300 W @ TC = ≤ 100 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θJC
0.57 °C/W
CHARACTERISTICS
TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 60 mA
55
V
BVCES
IC = 100 mA
55
V
BVEBO
IE = 10 mA
3.5
V
ICES
VCB = 35 V
hFE
VCE = 5.0 V
POUT
PG
ηC
VCC = 35 V
25
IC = 5.0 A
f = 960 to 1215 MHz
---
20
PIN = 26.7 W
300
7.0
38
330
7.4
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
W
dB
%
REV. A
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