ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L DESCRIPTION: N J O A 1 B The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. D 2 3 M FEATURES: F • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz • Omnigold™ Metalization System Q M IN IM U M D IM .110 / 2.80 B .110 / 2.80 .395 / 10.03 .230 / 5.84 G .003 / 0.08 H .118 / 3.00 J .650 / 16.51 .386 / 9.80 L .900 / 22.86 M .450 / 11.43 .125 / 3.18 .050 / 1.27 O TSTG -65 °C to +200 °C θJC 0.55 °OC/W .131 / 3.33 .063 / 1.60 N .405 / 10.29 P -65 °C to +250 °C .006 / 0.15 I K 270 W @ TC = 25 °C SYMBOL .407 / 10.34 .193 / 4.90 F 32 V CHARACTERISTICS inches / m m .140 / 3.56 E VCC TJ M AXIM U M inches / m m A MAXIMUM RATINGS PDISS I R D 13.5 A .062 x 45° Ø.120 P H C IC K 4 C G E Q .170 / 4.32 R .062 / 1.58 1 = COLLECTOR 2&3 = BASE 4 = EMITTER ORDER CODE: ASI10514 TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 100 mA 65 V BVEBO IE = 10 mA 3.5 V ICES VCE = 32 V hFE VCE = 5.0 V IC = 5.0 A PG ηC VCC = 28 V POUT = 100 W 15 f = 1.2 to 1.4 GHz 6.0 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 20 mA --- --dB % REV. C 1/1