AVD250 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVD250 is Designed for Class C, DME/TACAN Applications up to 1150 MHz. 1 2X B 2 3 G H L 55 V 600 W @ TC ≤ 80 °C TSTG -65 °C to +200 °C θJC 0.2 °C/W M IN IM U M in c h e s / m m in c h e s / m m A .0 2 0 / 0 .5 1 .0 3 0 / 0 .7 6 B .1 0 0 / 2 .5 4 C .3 7 6 / 9 .5 5 D .1 1 0 / 2 .7 9 .1 3 0 / 3 .3 0 E .3 9 5 / 1 0 .0 3 .4 0 7 / 1 0 .3 4 M A X IM U M .3 9 6 / 1 0 .0 6 F .1 9 3 / 4 .9 0 G .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 I .6 4 0 / 1 6 .2 6 J .8 9 0 / 2 2 .6 1 .9 1 0 / 2 3 .1 1 K .3 9 5 / 1 0 .0 3 .4 1 5 / 1 0 .5 4 SYMBOL .6 6 0 / 1 6 .7 6 .0 0 7 / 0 .1 8 L .0 0 4 / 0 .1 0 M .0 5 2 / 1 .3 2 .0 7 2 / 1 .8 3 N .1 1 8 / 3 .0 0 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4 P CHARACTERISTICS N D IM H -65 °C to +250 °C K P 17.8 A TJ I J M MAXIMUM RATINGS PDISS E F • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System VCC .0 2 5 x 4 5 ° Ø D C FEATURES: IC A 4 x .0 6 2 x 4 5 ° 1 = Collector 2 = Base 3 = Emitter ORDER CODE: ASI10565 TC = 25 °C NONETEST CONDITIONS BVCBO IC = 10 mA BVCER IC = 25 mA BVEBO IE = 1.0 mA ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V RBE = 10 Ω IC = 1.0 A POUT = 250 W MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 15 f = 1025 - 1150 MHz UNITS 6.2 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 25 mA 120 --dB % REV. C 1/1