MSC1150M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI MSC1150M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G H • Internal Input/Output Matching Networks • PG = 7.8 dB at 150 W/1150 MHz • Omnigold™ Metalization System L M 11 A VCC 55 V 400 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 0.3 °C/W CHARACTERISTICS M IN IM U M M A X IM U M inches / m m inches / m m A .0 2 0 / 0 .5 1 .0 3 0 / 0 .7 6 B .1 0 0 / 2 .5 4 C .3 7 6 / 9 .5 5 D .1 1 0 / 2 .7 9 .1 3 0 / 3 .3 0 E .3 9 5 / 1 0 .0 3 .4 0 7 / 1 0 .3 4 .3 9 6 / 1 0 .0 6 F .1 9 3 / 4 .9 0 G .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 I .6 4 0 / 1 6 .2 6 J .8 9 0 / 2 2 .6 1 .6 6 0 / 1 6 .7 6 .9 1 0 / 2 3 .1 1 K .3 9 5 / 1 0 .0 3 .4 1 5 / 1 0 .5 4 L .0 0 4 / 0 .1 0 .0 0 7 / 0 .1 8 M .0 5 2 / 1 .3 2 .0 7 2 / 1 .8 3 N .1 1 8 / 3 .0 0 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4 P TC = 25 °C NONETEST CONDITIONS SYMBOL N D IM H PDISS K P MAXIMUM RATINGS IC I J BVCBO IC = 10 mA BVCER IC = 15 mA BVEBO IE = 1.0 mA ICES VCE = 50 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηC VCC = 50 V RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 15 f = 1.0 MHz POUT = 150 W f = 1025 - 1150 MHz UNITS 7.8 40 8.3 42 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 12.5 mA 120 --- 80 pF dB % REV. B 1/1