ASI MLN2030SS_07

MLN2030SS
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN2030SS is Designed
for Class A linear Applications up to
2.0 GHz.
PACKAGE STYLE .205 4L STUD
D
FEATURES:
A
C
• Class A Operation
• PG = 10 dB at 1.0 W/2.0 GHz
• Omnigold™ Metalization System
B
G
E
F
H
#8-32UNC
MAXIMUM RATINGS
J
IC
10 A
VCB
60 V
VCE
PDISS
35 V
140 W @ TC = 25 °C
TSTG
-65 °C to +150 °C
θJC
20 °C/W
CHARACTERISTICS
inches / m m
A
.976 / 24.800
1.000 / 25.4000
B
.976 / 24.800
1.000 / 25.4000
C
.028 / 0.700
.031 / 0.800
.138 / 3.500
E
.161 / 4.100
F
.098 / 2.500
.110 / 2.800
G
.200 / 5.100
.208 / 5.300
.196 / 5.000
H
.004 / 0.100
.006 / 0.150
I
.425 / 10.800
.465 / 11.800
J
.200 / 5.100
2.05 / 5.200
ORDER CODE: ASI10633
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
M AX IM UM
inches / m m
D
-65 °C to +200 °C
TJ
M INIM UM
DIM
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
PGE
VCE = 18 V
POUT = 1.0 W
RBE = 10 Ω
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
V
60
V
4.0
V
10
f = 1.0 MHz
ICQ = 220 mA
f = 2.0 GHz
UNITS
35
10
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5.0
mA
100
---
5.0
pF
dB
REV. B
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