MLN1027F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG DESCRIPTION: A ØD The ASI MLN1027F is Designed for Class A, Linear Applications up to 1.0 GHz. B .060 x 45° CHAMFER C E FEATURES: G • Class A Operation • PG = 12 dB at 0.5 W/1.0 GHz • Omnigold™ Metalization System L 300 mA VCE 20 V PDISS --- W θJC 25 °C/W CHARACTERISTICS inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10618 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM inches / mm G -65 °C to +200 °C NP MINIMUM F TSTG I K DIM E -65 °C to +200 °C TJ J M MAXIMUM RATINGS IC F H MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 50 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICEO VCE = 18 V hFE VCE = 5.0 V COB VCB = 28 V PG VCE = 20 V ICQ = 100 mA IC = 100 mA 15 f = 1.0 MHz POUT = 0.5 W f = 1.0 GHz 12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 3.5 pF dB REV. B 1/1