AVD015F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG (B) The ASI AVD015F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Class C Operation • PG = 10 dB at 15 W/1150 MHz • Omnigold™ Metalization System E F G H I MAXIMUM RATINGS 1.25 A PEAK IC 50 V VCB PDISS 50 W PEAK TSTG -65 °C to +150 °C θJC 2.0 °C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 MAXIMUM C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 .003 / 0.08 .007 / 0.18 .255 / 6.48 .285 / 7.24 H I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 .210 / 5.33 K ORDER CODE: ASI10556 TC = 25 °C NONETEST CONDITIONS SYMBOL K DIM G -65 °C to +200 °C TJ J BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1.0 mA ICES VCB = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V RBE = 10 Ω IC = 500 mA POUT = 15 W f = 1025 – 1150 MHz MINIMUM TYPICAL MAXIMUM UNITS 65 V 65 V 3.5 V 15 10.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.5 mA 120 --dB % REV. B 1/1