AVD075F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG (B) The ASI AVD075F is designed for applications requiring Class C, High Peak Power and low duty cycle such as IFF, DME and TACAN A .100 X 45° ØD C B E FEATURES: F G H • Internal Input Matching Network • PG = 7.5 dB at 75 W/1150 MHz • Omnigold™ Metalization System I MAXIMUM RATINGS 5.5 A PEAK IC VCB PDISS .088 x 45° CHAMFER 65 V 220 W -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.8 °C/W CHARACTERISTICS inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 MAXIMUM C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 .003 / 0.08 .007 / 0.18 .255 / 6.48 .285 / 7.24 I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 K .210 / 5.33 ORDER CODE: ASI10560 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM H TJ K DIM G PEAK J BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1.0 mA ICES VCE = 50 V hFE VCE = 5.0 V PG ηC POUT = 75 W VCC = 50 V PIN = 13.5 W NOTE: Pulse Width = 10 µS RBE = 10 Ω IC = 500 mA f = 1025 - 1150 MHz MINIMUM TYPICAL MAXIMUM UNITS 65 V 65 V 3.5 V 11 7.5 35 5.0 mA 200 --dB % Duty Cycle = 1 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1