MRF1035MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL (A) A C .100x45° FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1090 MHz • Omnigold™ Metalization System C B B B ØG E MAXIMUM RATINGS D IC 2.0 A VCBO 60 V VCES 60 V PDISS 35 W E PEAK TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.0 °C/W DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .195 / 4.95 .205 / 5.21 C 1.000 / 25.40 D .004 / 0.10 .007 / 0.18 E .050 / 1.27 .065 / 1.65 MAXIMUM .145 / 3.68 F CHARACTERISTICS .275 / 6.99 G .285 / 7.21 TC = 25 °C NONETEST CONDITIONS SYMBOL F MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 60 V BVCES IC = 20 mA 60 V BVEBO IE = 2.0 mA 4.0 V ICBO VCE = 50 V hFE VCE = 5.0 V Cob VCB = 50 V PG ηC VCC = 50 V IC = 500 mA 10 f = 1.0 MHz POUT = 35 W f = 1090 MHz 10 10 30 12.4 34 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.0 mA 100 --- 15 pF dB % REV. B 1/1