ASI BLW86

BLW86
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW86 is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
PACKAGE STYLE .380 4L FLG
FEATURES:
B
.112 x 45°
• Common Emitter
• PG = 7.0 dB at 40 W/175 MHz
• Omnigold™ Metalization System
A
C
E
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
MAXIMUM RATINGS
E
F
IC
5.0 A
VCBO
65 V
VCE0
35 V
VEBO
4.0 V
I
GH
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.785 / 19.94
C
.720 / 18.29
.730 / 18.54
D
.970 / 24.64
.980 / 24.89
F
.004 / 0.10
.006 / 0.15
.385 / 9.78
E
PDISS
60 W @ TC = 25 °C
G
.085 / 2.16
.105 / 2.67
TJ
-65 °C to +200 °C
H
.160 / 4.06
.180 / 4.57
TSTG
-65 °C to +150 °C
J
.240 / 6.10
.255 / 6.48
θJC
2.9 °C/W
.280 / 7.11
I
CHARACTERISTICS
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 200 mA
35
V
BVCES
IC = 200 mA
65
V
BVCBO
IC = 10 mA
65
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
1.0
mA
ICES
VCE = 30 V
10
mA
hFE
VCE = 5.0 V
200
---
Cob
VCB = 30 V
65
pF
PG
ηC
VCE = 28 V
IC = 500 mA
5.0
f = 1.0 MHz
PIN = 7.0 W
f = 175 MHz
7.6
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
dB
%
REV. A
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