BLW86 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° • Common Emitter • PG = 7.0 dB at 40 W/175 MHz • Omnigold™ Metalization System A C E Ø.125 NOM. FULL R J .125 B E C D MAXIMUM RATINGS E F IC 5.0 A VCBO 65 V VCE0 35 V VEBO 4.0 V I GH MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 .385 / 9.78 E PDISS 60 W @ TC = 25 °C G .085 / 2.16 .105 / 2.67 TJ -65 °C to +200 °C H .160 / 4.06 .180 / 4.57 TSTG -65 °C to +150 °C J .240 / 6.10 .255 / 6.48 θJC 2.9 °C/W .280 / 7.11 I CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVCBO IC = 10 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 1.0 mA ICES VCE = 30 V 10 mA hFE VCE = 5.0 V 200 --- Cob VCB = 30 V 65 pF PG ηC VCE = 28 V IC = 500 mA 5.0 f = 1.0 MHz PIN = 7.0 W f = 175 MHz 7.6 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. A 1/1