ASI BLY93C_07

BLY93C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY93C is Designed for
Class C, 28V High Band Applications
up to 175 MHz.
PACKAGE STYLE .380 4L STUD
.112x45°
FEATURES:
• PG = 9.0 dB min. at 25 W/175 MHz
• Common Emitter Configuration
• Omnigold™ Metalization System
E
ØC
E
B
D
H
I
J
IC
3.0 A
VCBO
65 V
VCEO
35 V
PDISS
C
B
MAXIMUM RATINGS
VEBO
A
G
#8-32 UNC-2A
F
E
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
4.0 V
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
70 W @ TC = 25 °C
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.5 °C/W
MAXIMUM
.175 / 4.45
.750 / 19.05
J
CHARACTERISTICS
TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
35
V
BVCES
IC = 10 mA
65
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 36 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
f = 1.0 MHz
GP
VCE = 28 V
f = 175 MHz
fT
VCB = 28 V
4.0
IC = 1.25 A
IE = 200 mA
10
100
45
9.0
f = 100 MHz
--pF
dB
625
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
MHz
REV. C
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