BLY93C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY93C is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B • Common Emitter • PG = 9.0 dB at 25 W/175 MHz • Omnigold™ Metalization System .112 x 45° A E C Ø.125 NOM. FULL R J .125 E B C D MAXIMUM RATINGS E F IC 3.0 A VCBO 65 V VCEO 35 V VEBO PDISS G H I DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 4.0 V B .785 / 19.94 C .720 / 18.29 .730 / 18.54 70 W @ TC = 25 °C D .970 / 24.64 .980 / 24.89 TJ -65 °C to +200 °C F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 TSTG -65 °C to +150 °C H .160 / 4.06 θJC 2.5 °C/W .385 / 9.78 E .240 / 6.10 .255 / 6.48 TC = 25 °C NONETEST CONDITIONS SYMBOL .180 / 4.57 .280 / 7.11 I J CHARACTERISTICS MAXIMUM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 35 V BVCES IC = 10 mA 65 V BVEBO IE = 10 mA 4.0 V ICES VCE = 36 V hFE VCE = 5.0 V COB VCB = 28 V f = 1.0 MHz GP VCE = 28 V f = 175 MHz fT VCB = 28 V IC = 1.25 A IE = 200 mA 10 4.0 mA 100 --pF 45 9.0 f = 100 MHz --625 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change witout notice. dB MHz REV. A 1/1