BLW76 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW76 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band. PACKAGE STYLE .380 4L FLG B .112 x 45° A C E FEATURES: J .125 C D E F I GH MAXIMUM RATINGS DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 60 V B .785 / 19.94 C .720 / 18.29 .730 / 18.54 35 V D .970 / 24.64 .980 / 24.89 IC 10 A VCB VCE E B • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System MAXIMUM .385 / 9.78 E O PDISS 140 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 1.05 C/W O O O O F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I .240 / 6.10 J .255 / 6.48 O CHARACTERISTICS O TC = 25 C NONETEST CONDITIONS SYMBOL BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V GPE VCE = 25 V IMD3 Ø.125 NOM. FULL R PREF = 16 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM 35 V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz UNITS 13.5 mA 100 --- 80 pF 14.5 Snd. = -7 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 dB -55 dBc REV. A 1/1