ASI BLW76

BLW76
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW76 is Designed for use
in class-AB or class-B operated high
power transmitters in the H.F. and
V.H.F bands and, as a Linear amplifier
in the H.F. band.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
C
E
FEATURES:
J
.125
C
D
E
F
I
GH
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
60 V
B
.785 / 19.94
C
.720 / 18.29
.730 / 18.54
35 V
D
.970 / 24.64
.980 / 24.89
IC
10 A
VCB
VCE
E
B
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System
MAXIMUM
.385 / 9.78
E
O
PDISS
140 W @ TC = 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +150 C
θJC
1.05 C/W
O
O
O
O
F
.004 / 0.10
.006 / 0.15
G
.085 / 2.16
.105 / 2.67
H
.160 / 4.06
.180 / 4.57
.280 / 7.11
I
.240 / 6.10
J
.255 / 6.48
O
CHARACTERISTICS
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
GPE
VCE = 25 V
IMD3
Ø.125 NOM.
FULL R
PREF = 16 W
RBE = 10 Ω
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
V
60
V
4.0
V
10
f = 1.0 MHz
ICQ = 3.2 A
Vision = -8 dB
Side Band = -16 dB
f = 225 MHz
UNITS
13.5
mA
100
---
80
pF
14.5
Snd. = -7 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5.0
dB
-55
dBc
REV. A
1/1