BLW97 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW97 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 11.5 dB min. at 175 W/30 MHz • IMD3 = -30 dBc max. at 175 W (PEP) • Omnigold™ Metalization System Ø.125 NOM. C B B E E D G H F MAXIMUM RATINGS I J K IC 15 A VCESM 65 V VCEO 33 V C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 VEBO 4.0 V E F .970 / 24.64 .980 / 24.89 230 W @ TC = 25 °C G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 PDISS MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM .125 / 3.18 B -65 °C to +200 °C TJ DIM .125 / 3.18 .280 / 7.11 K TSTG -65 °C to +150 °C θJC 0.76 °C/W CHARACTERISTICS L TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 50 mA 65 V BVCEO IC = 100 mA 33 V BVEBO IE = 20 mA 4.0 V ICES VCE = 33 V hFE VCE = 5.0 V IC = 10 A IC = 25 A IB = 5.0 A VCE(SAT) CC VCB = 28 V GP IMD3 ηC VCE = 28 V 15 f = 1.0 MHz 20 mA 50 --- 2.4 V 380 pF 11.5 ICQ = 100 mA POUT = 175 W (PEP) dB dBc % -30 40 IMPEDANCE DATA FREQ. 470 MHz ZIN(Ω) 1.5 – j2.7 ZCL(Ω) 5.7 + j1.5 PIN(W) 2.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. VCE(V) 12.5 REV. A 1/1