MRF329 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF329 is Designed for Wide Band Large-Signal Output and Driver Amplifier Stages in the 100-500 MHz Frequency Range. PACKAGE STYLE .400X.425" 6L FLG. FEATURES INCLUDE: • Gold Metalization • 3:1 VSWR • I/O Network Matching MAXIMUM RATINGS IC 9.0 A (CONT) 12.0 A (PEAK) VCB 60 V PDISS 270 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +150 C θJC O O O O O O 1 & 3 = EMITTER 2 = COLLECTOR 4 = BASE 0.65 C/W CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 80 mA 60 V BVCES IC = 80 mA 60 V BVCEO IC = 80 mA 30 V BVEBO IE = 8.0 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 28 V GPE η VCC = 28 V Pout = 100 W f = 400 MHz ψ VCC = 28 V VSWR = 3:1 Pout = 100 W f = 400 MHz ALL PHASE ANGLES IC = 4.0 A 20 f = 1.0 MHz 95 7.0 50 5.0 mA 80 --- 125 pF 9.7 60 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1