t U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF329 . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 100 Watts Minimum Gain = 7.0 dB Efficiency = 50% (Min) • Built-in Matching Network for Broadband Operation Using Double Match Technique • 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR • Gold Metallization System for High Reliability 100 W, 100 to 500 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 333-04, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit VCEO VCBO VEBO 30 Vdc 60 Vdc 4.0 Vdc Collector Current — Continuous — Peak ic 9.0 12 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 270 1.54 Watts W/°C Tstg -65to+150 °C Symbol Max Unit Rejc 0.65 °C/W Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (lc = 80 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector-Emitter Breakdown Voltage (lc = 80 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter-Base Breakdown Voltage (IE = 8.0 mAdc, lc = 0) V(BR)EBO 4.0 — — Vdc OFF CHARACTERISTICS NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. Oilrilitv ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted.) Characteristic Symbol Min Typ V(BR)CBO 60 !CBO | Max Unit — — Vdc — — 5.0 mAdc hFE 20 ^ 80 — Cob — 95 125 PF Common-Emitter Amplifier Power Gain (VCc = 28 Vdc, Pout = 100 W, f = 400 MHz) GPE 7.0 9.7 — dB Collector Efficiency (Vcc = 28 Vdc, Pout = 1 00 W, f = 400 MHz) 1 50 60 — % Load Mismatch (Vcc = 28 Vdc, Pout = 100 W, f = 400 MHz, VSWR = 3:1 all angles) V OFF CHARACTERISTICS (continued) Collector-Base Breakdown Voltage (lc = 80 mAdc, IE = 0) Collector Cutoff Current (VCB = so vdc, IE = o) ON CHARACTERISTICS DC Current Gain (lc = 4.0 Adc, VCE - 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc. IE = o. f = 1 .0 MHz) FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power L3 O- C13 C12 28 Vdc C14 ! L1 L2 • OUT V INPUT/ C10 If II '"" liJ. Z1 C3 ;cs C4 C1, C2, C7, C9— 1.0-20 pF Johanson (JMC 5501) C3, C4 — 36 pF 100 mil Chip Cap (ATC) C5, C6 — 50 pF 100 mil Chip Cap (ATC) C8 — 30 pF 100 mil Chip Cap (ATC) C10 — 2.0-150 pF 100 mil Chip Caps in Parallel (ATC) C11 — 1.0-10 pF Johanson (JMC 5201) C12, C13—1000pFUNELCOFeedthru C14 — 0.1 nF Erie Redcap <?C9 RF OUTPUT ? L1 — 0.15 nH Molded Choke with Ferrite Bead (Ferroxcube #56-590-65/46) on Ground End L2 — 4 Turns #18 AWG, 1/4" ID L3 — Ferroxcube VK200-19/4B Z1 — Microstrip Line 2300 mils L x 210 mils W Z2 — Microstrip Line 2300 mils L x 280 mils W Board — Glass Teflon, t = 0.062", £r = 2.56 Figure 1. 400 MHz Test Circuit