NPN Silicon RF Power Transistor

t U na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
The RF Line
NPN Silicon
RF Power Transistor
MRF329
. . . designed primarily for wideband large-signal output and driver amplifier
stages in the 100 to 500 MHz frequency range.
•
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 100 Watts
Minimum Gain = 7.0 dB
Efficiency = 50% (Min)
•
Built-in Matching Network for Broadband Operation Using Double Match
Technique
•
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
•
Gold Metallization System for High Reliability
100 W, 100 to 500 MHz
CONTROLLED "Q"
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 333-04, STYLE 1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
Unit
VCEO
VCBO
VEBO
30
Vdc
60
Vdc
4.0
Vdc
Collector Current — Continuous
— Peak
ic
9.0
12
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
270
1.54
Watts
W/°C
Tstg
-65to+150
°C
Symbol
Max
Unit
Rejc
0.65
°C/W
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lc = 80 mAdc, IB = 0)
V(BR)CEO
30
—
—
Vdc
Collector-Emitter Breakdown Voltage
(lc = 80 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Emitter-Base Breakdown Voltage
(IE = 8.0 mAdc, lc = 0)
V(BR)EBO
4.0
—
—
Vdc
OFF CHARACTERISTICS
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Oilrilitv
ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)CBO
60
!CBO
|
Max
Unit
—
—
Vdc
—
—
5.0
mAdc
hFE
20
^
80
—
Cob
—
95
125
PF
Common-Emitter Amplifier Power Gain
(VCc = 28 Vdc, Pout = 100 W, f = 400 MHz)
GPE
7.0
9.7
—
dB
Collector Efficiency
(Vcc = 28 Vdc, Pout = 1 00 W, f = 400 MHz)
1
50
60
—
%
Load Mismatch
(Vcc = 28 Vdc, Pout = 100 W, f = 400 MHz,
VSWR = 3:1 all angles)
V
OFF CHARACTERISTICS (continued)
Collector-Base Breakdown Voltage
(lc = 80 mAdc, IE = 0)
Collector Cutoff Current
(VCB = so vdc, IE = o)
ON CHARACTERISTICS
DC Current Gain
(lc = 4.0 Adc, VCE - 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc. IE = o. f = 1 .0 MHz)
FUNCTIONAL TESTS (Figure 1)
No Degradation in Output Power
L3
O-
C13
C12
28 Vdc
C14
! L1
L2 •
OUT
V
INPUT/
C10
If
II
'""
liJ.
Z1
C3
;cs
C4
C1, C2, C7, C9— 1.0-20 pF Johanson (JMC 5501)
C3, C4 — 36 pF 100 mil Chip Cap (ATC)
C5, C6 — 50 pF 100 mil Chip Cap (ATC)
C8 — 30 pF 100 mil Chip Cap (ATC)
C10 — 2.0-150 pF 100 mil Chip Caps in Parallel (ATC)
C11 — 1.0-10 pF Johanson (JMC 5201)
C12, C13—1000pFUNELCOFeedthru
C14 — 0.1 nF Erie Redcap
<?C9
RF
OUTPUT
?
L1 — 0.15 nH Molded Choke with Ferrite Bead
(Ferroxcube #56-590-65/46) on Ground End
L2 — 4 Turns #18 AWG, 1/4" ID
L3 — Ferroxcube VK200-19/4B
Z1 — Microstrip Line 2300 mils L x 210 mils W
Z2 — Microstrip Line 2300 mils L x 280 mils W
Board — Glass Teflon, t = 0.062", £r = 2.56
Figure 1. 400 MHz Test Circuit