Order this document by MRF329/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 100 Watts Minimum Gain = 7.0 dB Efficiency = 50% (Min) 100 W, 100 to 500 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation Using Double Match Technique • 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR • Gold Metallization System for High Reliability CASE 333–04, STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 30 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 9.0 12 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 270 1.54 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.65 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 8.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Characteristic OFF CHARACTERISTICS NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF329 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)CBO 60 — — Vdc ICBO — — 5.0 mAdc hFE 20 — 80 — Cob — 95 125 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz) GPE 7.0 9.7 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz) η 50 60 — % Load Mismatch (VCC = 28 Vdc, Pout = 100 W, f = 400 MHz, VSWR = 3:1 all angles) ψ OFF CHARACTERISTICS (continued) Collector–Base Breakdown Voltage (IC = 80 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power L3 + C12 28 Vdc C13 – C14 L1 L2 DUT C10 RF OUTPUT Z2 RF INPUT Z1 C1 C2 C3 C4 C1, C2, C7, C9 — 1.0 – 20 pF Johanson (JMC 5501) C3, C4 — 36 pF 100 mil Chip Cap (ATC) C5, C6 — 50 pF 100 mil Chip Cap (ATC) C8 — 30 pF 100 mil Chip Cap (ATC) C10 — 2.0 – 150 pF 100 mil Chip Caps in Parallel (ATC) C11 — 1.0 – 10 pF Johanson (JMC 5201) C12, C13 — 1000 pF UNELCO Feedthru C14 — 0.1 µF Erie Redcap C5 C6 C7 C8 C9 C11 L1 — 0.15 µH Molded Choke with Ferrite Bead L1 — (Ferroxcube #56–590–65/4B) on Ground End L2 — 4 Turns #18 AWG, 1/4″ ID L3 — Ferroxcube VK200–19/4B Z1 — Microstrip Line 2300 mils L x 210 mils W Z2 — Microstrip Line 2300 mils L x 280 mils W Board — Glass Teflon, t = 0.062″, εr = 2.56 Figure 1. 400 MHz Test Circuit MRF329 2 MOTOROLA RF DEVICE DATA 120 f = 100 MHz 100 Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) 120 225 MHz 400 MHz 80 60 40 20 0 VCC = 28 Vdc 0 2 4 6 8 10 Pin = 11 W 100 9W 80 6W 60 4W 40 20 VCC = 28 Vdc 0 100 12 150 200 Figure 2. Output Power versus Input Power 300 100 Pin = 11 W 80 8.5 W 60 6.5 W 40 20 14 18 22 400 Pin = 11 W 80 8.5 W 6.5 W 60 40 20 f = 400 MHz f = 225 MHz 0 10 350 Figure 3. Output Power versus Frequency Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) 100 250 f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS) 0 10 30 26 14 18 22 26 30 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 12.5 G PE , POWER GAIN (dB) Pout = 100 W VCC = 28 V 11.5 10.5 9.5 8.5 0 100 200 300 400 f, FREQUENCY (MHz) Figure 6. Power Gain versus Frequency MOTOROLA RF DEVICE DATA MRF329 3 f = 100 MHz 350 400 225 Zin 300 225 300 350 ZOL* 400 Pout = 100 W, VCC = 28 V f = 100 MHz Zo = 10 Ω f MHz Zin Ohms ZOL* Ohms 100 225 300 350 400 0.55 + j0.40 0.60 + j1.40 1.00 + j2.15 1.50 + j2.20 1.85 + j1.70 3.56 – j1.60 2.30 – j1.10 1.95 – j0.70 1.70 – j0.20 1.50 + j0.30 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 7. Series Equivalent Input/Output Impedance MRF329 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– Q N 0.13 (0.005) D M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L N P Q K 2 1 2 PL 3 –B– P K 4 F G J N H STYLE 1: PIN 1. 2. 3. 4. N C –T– INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.190 0.210 0.095 0.115 0.215 0.235 0.725 BSC 0.155 0.175 0.004 0.006 0.195 0.205 0.740 0.770 0.415 0.425 0.390 0.400 0.120 0.135 MILLIMETERS MIN MAX 24.51 25.02 9.91 10.41 6.73 7.36 4.83 5.33 2.42 2.92 5.47 5.96 18.42 BSC 3.94 4.44 0.10 0.15 4.95 5.21 18.80 19.55 10.54 10.80 9.91 10.16 3.05 3.42 EMITTER COLLECTOR EMITTER BASE SEATING PLANE CASE 333–04 ISSUE E MOTOROLA RF DEVICE DATA MRF329 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF329 6 ◊ *MRF329/D* MRF329/D MOTOROLA RF DEVICE DATA