MRF3866 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF3866 is Designed for General Purpose Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V VCB 55 V VEB 3.5 V PDISS 1.0 W @ TC = 100 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C θJC 125 °C/W CHARACTERISTICS O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 30 V BVCBO IC = 100 µA 55 V BVEBO IE = 100 µA 3.5 V ICEO VCB = 28 V 20 VCE = 5.0 V IC = 360 mA 5.0 VCE = 5.0 V IC = 50 mA 10 VCE(sat) IC = 100 mA IB = 20 mA COB VCB = 30 V ft VCE = 15 V hFE 200 f = 1.0 MHz IC = 50 mA f = 200 MHz 800 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. µA --- 250 mV 3.0 pF MHz REV. A 1/1