ASI BFT51F

BFT51F
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
PACKAGE STYLE TO- 126
The ASI BFT51 is Designed for
High Frequency Amplifier Applications.
MAXIMUM RATINGS
IC
500 mA
VCE
20 V
PDISS
3.0 W @ TC = 25 °C
TJ
-65 °C to +175 °C
TSTG
-65 °C to +175 °C
θJC
20 K/W
NONE
CHARACTERISTICS
SYMBOL
TC = 25 °C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
10
V
19
V
IC = 5.0 mA
20
V
BVEBO
IC = 1.0 mA
3.0
V
ICES
VCE = 10 V
BVCEO
IC = 10 mA
BVCER
IC = 10 mA
BVCBO
HFE
VCE = 5.0 V
ft
VCE = 5.0 V
Ccb
VCB = 5.0 V
CC
VCB = 5.0 V
RBE = 100 Ω
100
IC = 100 mA
40
IC = 300 mA
50
IC = 300 mA
µA
---
2.0
GHz
f = 1.0 MHz
4.2
Pf
f = 1.0 MHz
5.8
Pf
f = 100 MHz
1.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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