BFT51F NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 126 The ASI BFT51 is Designed for High Frequency Amplifier Applications. MAXIMUM RATINGS IC 500 mA VCE 20 V PDISS 3.0 W @ TC = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +175 °C θJC 20 K/W NONE CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 10 V 19 V IC = 5.0 mA 20 V BVEBO IC = 1.0 mA 3.0 V ICES VCE = 10 V BVCEO IC = 10 mA BVCER IC = 10 mA BVCBO HFE VCE = 5.0 V ft VCE = 5.0 V Ccb VCB = 5.0 V CC VCB = 5.0 V RBE = 100 Ω 100 IC = 100 mA 40 IC = 300 mA 50 IC = 300 mA µA --- 2.0 GHz f = 1.0 MHz 4.2 Pf f = 1.0 MHz 5.8 Pf f = 100 MHz 1.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1